Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition

Mohammed S. Hegazy; Tamer F. Refaat; M. Nurul Abedin; Hani E. Elsayed-Ali

doi:10.1117/1.1907563

1 May 2005 Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition

Mohammed S. Hegazy, Tamer F. Refaat, M. Nurul Abedin, Hani E. Elsayed-Ali

Author Affiliations +

Optical Engineering, Vol. 44, Issue 5, 059702 (May 2005). https://doi.org/10.1117/1.1907563

Abstract

A multilayered infrared Ge/Si quantum-dot photodetector is fabricated by pulsed laser deposition. Forty successive Ge quantum dot layers, each covered with a thin Si layer, are deposited. Deposition is monitored by in situ reflection high-energy electron diffraction and the morphology is further studied by ex situ atomic force microscopy. Current-voltage measurements reveal typical diode characteristics, while responsivity measurements show an absorption peak around a 2-μm wavelength

©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Mohammed S. Hegazy, Tamer F. Refaat, M. Nurul Abedin, and Hani E. Elsayed-Ali "Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition," Optical Engineering 44(5), 059702 (1 May 2005). https://doi.org/10.1117/1.1907563

Published: 1 May 2005

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