Passive silicon-on-insulator polarization-rotating waveguides

Chris Brooks; Paul E. Jessop; Henghua Deng; David Yevick; N. Garry Tarr

doi:10.1117/1.2188408

1 April 2006 Passive silicon-on-insulator polarization-rotating waveguides

Chris Brooks, Paul E. Jessop, Henghua Deng, David Yevick, N. Garry Tarr

Author Affiliations +

Optical Engineering, Vol. 45, Issue 4, 044603 (April 2006). https://doi.org/10.1117/1.2188408

Abstract

We present preliminary experimental results for silicon-on-insulator polarization rotators with asymmetric external waveguiding layers. These devices consist of a waveguide with vertical and sloped sidewalls and are fabricated using a combination of plasma and chemical etching techniques. For a device length of 3256 µm, a TE-to-TM polarization conversion efficiency of 75% was measured.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Chris Brooks, Paul E. Jessop, Henghua Deng, David Yevick, and N. Garry Tarr "Passive silicon-on-insulator polarization-rotating waveguides," Optical Engineering 45(4), 044603 (1 April 2006). https://doi.org/10.1117/1.2188408

Published: 1 April 2006

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