Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current

Yongguo Chen; Weida Hu; Xiaoshuang Chen; Zhenhua Ye; Jun Wang; Xiaofang Wang; Chenhui Yu; Wei Lu

doi:10.1117/1.OE.51.3.036401

29 March 2012 Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current

Yongguo Chen, Weida Hu, Xiaoshuang Chen, Zhenhua Ye, Jun Wang, Xiaofang Wang, Chenhui Yu, Wei Lu

Author Affiliations +

Optical Engineering, Vol. 51, Issue 3, 036401 (March 2012). https://doi.org/10.1117/1.OE.51.3.036401

Abstract

We report on the temperature-dependent extension of n-type inversion regions in mercury cadmium telluride (HgCdTe) photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multidoped HgCdTe due to the freeze-out effect as the temperature decreases. Consequently, hole concentration is much lower than electron concentration at 87 K. The n-type inversion region extension is shown to be caused with the p-to-n type conversion.

Citation Download Citation

Yongguo Chen, Weida Hu, Xiaoshuang Chen, Zhenhua Ye, Jun Wang, Xiaofang Wang, Chenhui Yu, and Wei Lu "Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current," Optical Engineering 51(3), 036401 (29 March 2012). https://doi.org/10.1117/1.OE.51.3.036401

Published: 29 March 2012

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