Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

Sandro Rao; Giuseppe Coppola; Caterina Summonte; Mariano A. Gioffrè; Francesco G. Della Corte

doi:10.1117/1.OE.52.8.087110

19 August 2013 Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

Sandro Rao, Giuseppe Coppola, Caterina Summonte, Mariano A. Gioffrè, Francesco G. Della Corte

Author Affiliations +

Optical Engineering, Vol. 52, Issue 8, 087110 (August 2013). https://doi.org/10.1117/1.OE.52.8.087110

Abstract

A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at λ=1550 nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of Vπ×Lπ=19 V×cm allowing the design of shorter devices with respect to p-i-n structure.

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Sandro Rao, Giuseppe Coppola, Caterina Summonte, Mariano A. Gioffrè, and Francesco G. Della Corte "Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations," Optical Engineering 52(8), 087110 (19 August 2013). https://doi.org/10.1117/1.OE.52.8.087110

Published: 19 August 2013

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