Interfacial properties of Ga-doped ZnO thin films on Si

David C. Look; Bruce B. Claflin; Arnold M. Kiefer; Kevin D. Leedy

doi:10.1117/1.OE.53.8.087108

26 August 2014 Interfacial properties of Ga-doped ZnO thin films on Si

David C. Look, Bruce B. Claflin, Arnold M. Kiefer, Kevin D. Leedy

Author Affiliations +

Optical Engineering, Vol. 53, Issue 8, 087108 (August 2014). https://doi.org/10.1117/1.OE.53.8.087108

Abstract

Ga-doped ZnO films of thicknesses 3 to 500 nm were grown on Si at 200°C by pulsed-laser deposition in 10 mTorr of Ar. Sheet carrier concentration ns and mobility μ were measured at room temperature by the Hall effect and were fitted, respectively, to the equations n s (d)=n(∞)(d−δd) and μ(d)=μ(∞)/[1+d ∗ /(d−δd)] , where n(∞) is the predicted volume carrier concentration at d=∞ (the bulk value), δd is the thickness of the dead layer (if any), μ(∞) is the predicted mobility at d=∞ , and d ∗ is a figure of merit for the electrical properties of the interface. The fitted values of d ^∗[/sup] and δd were ∼23 and ∼11 nm , respectively. X-ray reflectance results were consistent with an ∼3-nm -thick interfacial layer of significantly lower density than that of bulk ZnO. X-ray photoelectron spectroscopy measurements showed an ∼10-nm -thick interfacial region in which the Ga peaks at ∼3.8% , well above the average value of 2.4% found in the bulk of the film.

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David C. Look, Bruce B. Claflin, Arnold M. Kiefer, and Kevin D. Leedy "Interfacial properties of Ga-doped ZnO thin films on Si," Optical Engineering 53(8), 087108 (26 August 2014). https://doi.org/10.1117/1.OE.53.8.087108

Published: 26 August 2014

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