Abnormal anti-Stokes Raman scattering and coherent backscattering as manifestation of Anderson localization of light in nonlinear mesoscopic materials

Ion Smaranda; Lucian Mihut; Mihaela Baibarac; Ioan Baltog; Serge Lefrant

doi:10.1117/1.OE.53.9.097109

19 September 2014 Abnormal anti-Stokes Raman scattering and coherent backscattering as manifestation of Anderson localization of light in nonlinear mesoscopic materials

Ion Smaranda, Lucian Mihut, Mihaela Baibarac, Ioan Baltog, Serge Lefrant

Author Affiliations +

Optical Engineering, Vol. 53, Issue 9, 097109 (September 2014). https://doi.org/10.1117/1.OE.53.9.097109

Abstract

We demonstrate that under continuous single-beam excitation, one can generate an abnormal anti-Stokes Raman emission (AASRE) whose properties are similar to a coherent anti-Stokes Raman scattering. The effect has been observed in mesoscopic materials, which possess intrinsically nonlinear properties [lithium niobate (LiNbO₃), bismuth germanium oxide (Bi₁₂GeO₂₀; BGO), bismuth silicon oxide (Bi₁₂GeO₂₀; BSO)], which have a nonzero electric susceptibility of the third order, χ⁽³⁾≠0. Corroborated Raman and coherent backscattering studies demonstrate that the occurrence of both effects is conditioned by the existence of a mesoscopic morphology of the sample, which is able to ensure efficient transport of the light inside the sample through a multiple light scattering mechanism. In this context, both AASRE and coherent backscattering effects are because of the Anderson localization of the light.

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Ion Smaranda, Lucian Mihut, Mihaela Baibarac, Ioan Baltog, and Serge Lefrant "Abnormal anti-Stokes Raman scattering and coherent backscattering as manifestation of Anderson localization of light in nonlinear mesoscopic materials," Optical Engineering 53(9), 097109 (19 September 2014). https://doi.org/10.1117/1.OE.53.9.097109

Published: 19 September 2014

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