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11 June 2015 High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8  μm
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We present our recent studies on a set of three different type-II InAs/GaSb superlattice interband cascade infrared (IR) photodetectors. Electroluminescence and x-ray diffraction measurements suggest that all the grown structures had comparable material qualities. Two of these detectors were two- and three-stage structures with regular-illumination configurations and the other was a two-stage structure with a reverse-illumination configuration. The 100% cutoff wavelength for these detectors was 6.2  μm at 78 K, extending to 8  μm at 300 K. At T=125  K and higher temperatures, we were able to observe the benefits of the three-stage detector over the two-stage device in terms of lower dark current and higher detectivity. We conjecture that the imperfections from the device growth and fabrication had a substantial effect on the low-temperature device performance and were responsible for the unexpected behavior at these temperatures. We also found that the zero-bias photoresponse increased with temperatures up to 200 K, which was indicative of efficient collection of photogenerated carriers at high temperatures. These detectors were able to operate at temperatures up to 340 K with a cutoff wavelength longer than 8  μm. This demonstrates the advantage of the interband cascade structures to achieve high-temperature operation for long-wave IR photodetectors.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286 /2015/$25.00 © 2015 SPIE
Hossein Lotfi, Lin Lei, Lu Li, Rui Q. Yang, Joel C. Keay, Matthew B. Johnson, Yueming Qiu, Dmitri Lubyshev, Joel M. Fastenau, and Amy W. K. Liu "High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8  μm," Optical Engineering 54(6), 063103 (11 June 2015).
Published: 11 June 2015

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