Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions

Yuusuke Takashima; Ryo Shimizu; Masanobu Haraguchi; Yoshiki Naoi

doi:10.1117/1.OE.54.6.067112

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24 June 2015 Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions

Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi

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Optical Engineering, 54(6), 067112 (2015). https://doi.org/10.1117/1.OE.54.6.067112

Abstract

We analytically investigated the influence of grating shape on polarization characteristics of the emission from a GaN-based light-emitting diode with a low-contrast subwavelength grating (SWG), such as SiO₂-SWG. The electromagnetic field distribution, calculated using the finite-difference time-domain method, predicted that the polarization characteristics strongly depend on the grating side slope. A trapezoid SiO₂-SWG was fabricated on the GaN-based-LED using electron-beam lithography. The optical characteristics of the electroluminescence agreed with those theoretically predicted, and we succeeded in demonstrating the influence of grating shape on the polarization of LED emission.

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Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, and Yoshiki Naoi "Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions," Optical Engineering 54(6), 067112 (24 June 2015). https://doi.org/10.1117/1.OE.54.6.067112

Published: 24 June 2015

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