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19 February 2016 Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber
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Abstract
We demonstrate a passively Q-switched Yb3+-dopedScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4  μJ, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2016/$25.00 © 2016 SPIE
Dazhi Lu, Zhongben Pan, Rui Zhang, Tianxiang Xu, Ruilong Yang, Bingchao Yang, Zhongyuan Liu, Haohai Yu, Huaijin Zhang, and Jiyang Wang "Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber," Optical Engineering 55(8), 081312 (19 February 2016). https://doi.org/10.1117/1.OE.55.8.081312
Published: 19 February 2016
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