Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth

Bernhard Steindl; Tomislav Jukić; Horst Zimmermann

doi:10.1117/1.OE.56.11.110501

1 November 2017 Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth

Bernhard Steindl, Tomislav Jukić, Horst Zimmermann

Author Affiliations +

Optical Engineering, Vol. 56, Issue 11, 110501 (November 2017). https://doi.org/10.1117/1.OE.56.11.110501

Abstract

Optimizing avalanche photodiodes (APDs) in standard complementary metal–oxide–semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength.

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Bernhard Steindl, Tomislav Jukić, and Horst Zimmermann "Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth," Optical Engineering 56(11), 110501 (1 November 2017). https://doi.org/10.1117/1.OE.56.11.110501

Received: 20 September 2017; Accepted: 17 October 2017; Published: 1 November 2017

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