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11 January 2017 Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices
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Significantly improved carrier lifetimes in very long-wave infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0  InAs/21.5  Ga0.75In0.25Sb SL structure that produces an 25  μm response at 10 K has a minority carrier lifetime of 140±20  ns at 18 K, which is an order-of-magnitude improvement compared with previously reported lifetime values for other VLWIR detector absorbers. This improvement is attributed to the strain-engineered ternary SL design, which offers a variety of epitaxial advantages and ultimately leads to the improvements in the minority carrier lifetime by mitigating defect-mediated Shockley–Read–Hall (SRH) recombination centers. By analyzing the temperature dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber were identified. The results show a general decrease in the long-decay lifetime component, which is dominated by SRH recombination at temperatures below 30  K and by Auger recombination at temperatures above 45  K. Since the strain-balanced ternary SL design offers a reasonably good absorption coefficient and many epitaxial advantages during growth, this VLWIR SL material system should be considered as a competitive candidate for VLWIR photodetector technology.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2017/$25.00 © 2017 SPIE
Heather J. Haugan, Benjamin V. Olson, Gail J. Brown, Emil A. Kadlec, Jin K. Kim, and Eric A. Shaner "Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices," Optical Engineering 56(9), 091604 (11 January 2017).
Received: 24 October 2016; Accepted: 16 December 2016; Published: 11 January 2017

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