19 August 2017 Improved mid-infrared interband cascade light-emitting devices
Chul S. Kim, William W. Bewley, Charles D. Merritt, Chad L. Canedy, Michael V. Warren, Igor Vurgaftman, Jerry R. Meyer, Mijin Kim
Author Affiliations +
Abstract
We report interband cascade light-emitting devices (ICLEDs) emitting at peak wavelengths of 3.1 to 3.2  μm that display higher maximum output powers, radiances, and efficiencies than any earlier midwave-infrared LEDs when operated at 10 to 105°C. To enhance the output power, we split the ICLED’s 22 active stages into four groups positioned at antinodes of the optical field so that the emission interferes constructively when reflected at near-normal incidence from the metal contact of the epitaxial-side-down mounted device. At an applied bias of 9.6 V and injection current of 0.6 A, an ICLED with mesa diameter of 400  μm produces 3.1 mW of continuous-wave output power at T=10°C, which corresponds to a radiance of 0.79  W/cm2/sr. The same device generates 1.7 mW at T=105°C.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2017/$25.00 © 2017 SPIE
Chul S. Kim, William W. Bewley, Charles D. Merritt, Chad L. Canedy, Michael V. Warren, Igor Vurgaftman, Jerry R. Meyer, and Mijin Kim "Improved mid-infrared interband cascade light-emitting devices," Optical Engineering 57(1), 011002 (19 August 2017). https://doi.org/10.1117/1.OE.57.1.011002
Received: 16 June 2017; Accepted: 26 July 2017; Published: 19 August 2017
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CITATIONS
Cited by 23 scholarly publications and 17 patents.
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KEYWORDS
Mid-IR

Light emitting diodes

Active optics

Metals

Continuous wave operation

Mirrors

Quantum cascade lasers

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