27 October 2018 Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes
Ximeng Chen, Huaimin Gu, Xiaolin Chen
Author Affiliations +
Abstract
The InGaN-based blue light-emitting diodes (LEDs) with double AlGaN/InGaN superlattice (SL) electron-blocking layers are investigated theoretically. The simulation results indicate that the output power, the radiative recombination rates, and the spontaneous emission rates of the blue LED with double AlGaN/InGaN superlattice layers are evidently improved, meanwhile, the efficiency droop phenomenon is remarkably alleviated, compared with the original structure. The reasons are that the new structure with double AlGaN/InGaN SLs can not only suppress the electron leakage but also enhance the hole injection. Specifically, it can improve the radiative recombination rates, which leads to higher output power than original structure.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2018/$25.00 © 2018 SPIE
Ximeng Chen, Huaimin Gu, and Xiaolin Chen "Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes," Optical Engineering 57(10), 105104 (27 October 2018). https://doi.org/10.1117/1.OE.57.10.105104
Received: 17 May 2018; Accepted: 4 October 2018; Published: 27 October 2018
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Cited by 2 scholarly publications.
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KEYWORDS
Light emitting diodes

Superlattices

Electron beam lithography

Gallium

Indium gallium nitride

Blue light emitting diodes

Doping

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