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16 September 2019 Quantum physics applied to modern optical metal oxide semiconductor transistor
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In recent years, traditional complementary metal–oxide–semiconductor (CMOS) scaling techniques have begun to reach the technological limits of available materials. A revolution in block-to-block communication is necessary to meet the ever-growing demand for microprocessor computational power. On-chip optical communication has been designated as a promising solution to circumvent the CMOS scaling bottlenecks: second-order phenomenon, which causes significant interconnect delays, and the nonscalability of the thermal voltage, which becomes significant in submicron CMOS technology. The metal oxide semiconductor quantum well transistor, a silicon-on-insulator metal–oxide–semiconductor field-effect transistor device, with a channel thickness reduced to the single nanometer scale is examined. The nanometric gate oxide, silicon, and buried oxide heterostructure in the channel forms a quantum potential well, creating discrete sub-bands within the silicon layer. Inter-sub-band-transitions within the quantum well may allow for radiative recombination in indirect band gap materials.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2019/$28.00 © 2019 SPIE
Michael Bendayan, Avraham R. Chelly, and Avi Karsenty "Quantum physics applied to modern optical metal oxide semiconductor transistor," Optical Engineering 58(9), 097106 (16 September 2019).
Received: 2 June 2019; Accepted: 27 August 2019; Published: 16 September 2019

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