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10 November 2021 Influence of an external electric field on the energy dissipation at the initial stage of laser ablation
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Abstract

A density-dependent two-temperature model is applied to describe laser excitation and the following relaxation processes of silicon in an external electric field. Two approaches on how to describe the effects of the external electric field are presented. The first approach avoids the buildup of internal electric fields due to charge separation by assuming ambipolar diffusion and adds an additional carrier-pair current. In the second approach, electrons and holes are treated separately to account for charge separation and the resulting shielding of the external electric field inside the material. The two approaches are compared to experimental results. Both the first approach and the experimental results show similar tendencies for optimization of laser ablation in the external electric field.

© 2021 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2021/$28.00 © 2021 SPIE
Steffen Hirtle, Pavel N. Terekhin, Mareike Schäfer, Yiyun Kang, Sanjay Ashok, Johannes A. L'huillier, and Baerbel Rethfeld "Influence of an external electric field on the energy dissipation at the initial stage of laser ablation," Optical Engineering 61(2), 021003 (10 November 2021). https://doi.org/10.1117/1.OE.61.2.021003
Received: 15 July 2021; Accepted: 21 September 2021; Published: 10 November 2021
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KEYWORDS
Electrons

Laser ablation

Phonons

Laser irradiation

Silicon

Optical engineering

Semiconductor lasers

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