This work presents a highly sensitive hybrid-integrated optical receiver with a custom designed linear transimpedance amplifier (TIA). The choice of the circuit and diode technology, considering the impact of process parameters on the optical sensitivity and the input referred noise current, are elaborated. The TIA has been designed in a 55-nm complementary metal oxide semiconductor process and was combined with a commercial InGaAs/InP PIN-diode. Measurements resulted in a transimpedance of 9.2 kΩ and a bandwidth of 1.4 GHz. The optical sensitivity of the hybrid receiver is −27.45 dBm for 2 Gbps, with a wavelength of 1550 nm and a bit error rate of ^{10 − 9}. The input referred root mean square (RMS) noise current results in 110 nA. The fabricated chip has an area of 410 μm × 410 μm and a power consumption of 31 mW at a 1 V supply voltage. The performance of the designed TIA is able to match other designs used in high sensitivity applications such as continuous variable quantum key distribution or optical wireless communication, while consuming significantly less power and having a smaller chip area.