From Event: SPIE Advanced Lithography, 2020
Process and reliability risks have become critically important during mass production at advanced technology nodes even with Extreme Ultraviolet Lithography (EUV) illumination. In this work, we propose a design-for-manufacturability solution using a set of new rules to detect high risk design layout patterns. The proposed methods improve design margins while avoiding area overhead and complex design restrictions. In addition, the proposed method introduces an in-design pattern replacement with automatically generated fixing hints to improve all matched locations with identified patterns.
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Jaehwan Kim, Jin Kim, Byungchul Shin, Sangah Lee, Jae-Hyun Kang, Joong-Won Jeon, Piyush Pathak, Jac Condella, Frank E. Gennari, Philippe Hurat, and Ya-Chieh Lai, "Process related yield risk mitigation with in-design pattern replacement for system ICs manufactured at advanced technology nodes," Proc. SPIE 11328, Design-Process-Technology Co-optimization for Manufacturability XIV, 113280I (Presented at SPIE Advanced Lithography: February 27, 2020; Published: 23 March 2020); https://doi.org/10.1117/12.2551970.