Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 °C for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD)，and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm<sup>-1</sup>, Different annealing periods were discussed.
Potentially low cost and large area polycrystalline mercuric iodide is one of the preferred materials for the fabrication of room temperature X-ray and gamma-ray detectors. The properties of the contact between electrode and film play an important role in the performance of the polycrystalline mercuric iodide detector. The crystalline structure of the as-deposited polycrystalline α-HgI<sub>2</sub> films were characterized by XRD. The surface morphology of the films was obtained by optical microscope and scan electron microscopes (SEM). And the I-V curve and the response to 241Am were measured after evaporating Au electrode. The energy resolution of 241Am α particles at room temperature was obtained.
In this work, the selenization growth of Cu<sub>2</sub>ZnSn(SxSe<sub>1−x</sub>)<sub>4</sub> (CZTSSe) films was optimized by two groups of experiments in vacuum chamber. The selenization of CZTSSe is strongly dependent on the Se supply in the vacuum chamber. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure resulted in the degradation of CZTSSe films with lower degree of crystallinity.The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, theCZTSSe film grown using 500°C showed more orientation along (220).