Given the large thermal activation energy of acceptors in high %Al AlGaN, a new approach is needed to control p-type
conductivity in this material. One promising alternative to using impurity doping with thermal activation is using the
intrinsic characteristics of the III-nitrides to activate dopants with polarization-induced charge in graded heterostructures.
In this work polarization-induced activation of dopants is used in graded AlGaN nanowires grown by plasma-assisted
molecular beam epitaxy to form ultraviolet light-emitting diodes. Electrical and optical characterization is provided,
showing clear diode behavior and electroluminescent emission at 336nm. Variable temperature electrical measurements
show little change in device performance at cryogenic temperatures, proving that dopant ionization is polarizationinduced
rather than thermally activated.