Scaling data centers to 200 Gbps/lane with direct detection may not provide sufficient link budget for optical switches. Analog coherent detection leverages phase and polarization of optical signals to scale efficiently without requiring digital signal processing and employs integrated lasers to maximize link budgets for optical switches. We report the first O-band silicon photonics coherent transmitter integrated with hybrid semiconductor optical amplifiers and tunable lasers. The laser demonstrated <6 dBm output power with ∼700 kHz linewidths across its 14 nm tuning spectrum. 64 Gbaud QPSK transmission was demonstrated with BER ∼4e-4 and ∼6.6 pJ/bit energy-efficiency when utilizing SiGe BiCMOS drivers.
Upgraded particle colliders will require high bandwidth readout capable of withstanding extremely high levels of radiation. Optical links Silicon photonics is a promising solution, but conventional high-speed modulators cannot survive radiation damage. Preliminary results show hardening techniques capable of enduring 1 Grad of total ionizing dose, but without yet demonstrating high speed modulation.
Ring resonator modulators were designed with various radiation hardness by design techniques and irradiated. Most promising is a highly doped ring resonator modulator with an 18 GHz bandwidth that survived 300 MRad of total ionizing dose.
Silicon (Si) photonics is well-positioned to provide high-speed and low-cost optical interconnects. The extraction of data from cryogenically cooled integrated circuits (ICs) has become of great interest for low-power data readout. Utilizing wavelength division multiplexing (WDM), a high capacity optical interconnect can be realized using remoted Si photonic based ring resonator modulators (RRMs). Results include operation up to 20 Gbps and BER < 1E-12 using a 2 Vpp signal, consuming < 100 fJ/bit in the cold environment. Lastly, Si photonic RRM device and interconnect optimizations for operation at temperatures ≤ 77 K will be presented.
Parasitics such as wirebond inductances and bond pad capacitances that result from hybrid opto-electronic integration pose a challenge towards achieving data rates beyond 50 Gb/s. The effect of bond pad capacitance on the receiver transimpedance limit is shown, which demonstrates the significant advantage of monolithic versus hybrid integration. An analysis of three receiver topologies is presented. These all employ the same Cherry-Hooper voltage amplifier for the core electronics. A comparison across several design metrics of the three Transimpedance amplifier (TIA) variants is then provided. The TIAs are implemented monolithically in the IHP 250-nm SiGe BiCMOS EPIC process (fT = 190 GHz). Measurement results are then presented for 50 Gb/s OOK. PAM4 simulations are also shown.
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