Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.
Integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for on-chip WDM systems. A number of device geometries have already been demonstrated that fulfill these criteria, at least in part, but combining all of the requirements is still a difficult challenge. I will present our recent work on photonic crystal enhanced light sources, modulators and detectors for silicon photonics, that promise to give the ultimate in low energy and area consumption.
We demonstrate electrically pumped silicon nano-light source at room temperature,
having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the
electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell
effect. The measured output power spectral density is 0.8mW/nm/cm<sup>2</sup>, which is
highest ever reported value from any silicon light emitter.