The spectral properties of Er3+-doped As2S3 and Ge33As12Se55 chalcogenide glasses are presented and discussed. Bulk samples and thin films have been studied. Bulk samples have been obtained by melt-quenching. Thin films have been obtained by RF sputtering. Sputtering targets have been fabricated from home-made cut and polished doped bulk samples and from commercial undoped targets with erbium pieces on the surface. The film morphology has been analysed by AFM and a column-like structure has been observed for the Ge33As12Se55 films. The presence of Er3+ ions in As2S3 and Ge33As12Se55 films has been confirmed by PL emission at 1.55 µm. A PL lifetime of 4 ms has been measured in Er-doped As2S3 films. Single mode waveguides have been fabricated by wet etching in Ge33As12Se55 films.