Dr. Adam W. Stadler Profile

Dr. Adam W. Stadler

at Politechnika Rzeszowska

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Proceedings Article | 25 July 2013 Paper

Fluctuating phenomena in resistive materials and devices

A. Stadler

Proceedings Volume 8902, 890222 (2013) https://doi.org/10.1117/12.2029998

KEYWORDS: Resistors, Resistance, Temperature metrology, Bridges, Amplifiers, Polymers, Wheatstone bridges, Interference (communication), Interfaces, Modulation

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Noise properties of thick-film resistors made of various resistive and conductive materials, including Pb-rich and Pb/Cd-free, have been studied. Power spectral density of voltage fluctuations has been measured using different methods which have been described and discussed, including ac and dc bridge configuration, cross-correlation technique and low-frequency noise spectroscopy (LFNS). In temperature range from 0.3 up to 350 K, for all studied samples 1/f noise resulting from resistance fluctuations has been found to be dominated noise component. Using LFNS thermally activated noise sources (TANSs) have been detected. Their interesting properties have been described and activation energies of TANSs have been extracted, which occurred to be below 1eV. Second spectra analysis has been applied revealing non-Gaussian noise components in 1/f noise. On the other hand, it has been found that noise intensity in TFRs, including devices designed for temperature sensing, increases rapidly when temperature drops below a few K. Model of conduction transport, involving hopping mechanism and electro-thermal feedback, has been used for explanation of noise suppression by excitation power, what was observed in temperatures below 1K, in the framework of inhomogeneous heating. Integral measure of noise has been introduced which was then used for qualitatively description of bulk noise generated by resistive layer and noise of contacts. Detailed comparison of material noise intensities obtained for various resistive materials has been shown. Conclusions concerning TFRs optimization with respect to noise have been given. Compatibility criteria for materials used for thick-film technology have been formulated and systems of compatible materials have been evaluated. The conclusions might be useful in further improvement of materials systems for thick-film technology in order to fabricate low-noise, reliable and stable resistors.

Proceedings Article | 22 June 2007 Paper

Numerical simulations of low-frequency noise in RuO2-glass films

Adam Stadler, Andrzej Kolek

Proceedings Volume 6600, 66000Q (2007) https://doi.org/10.1117/12.726235

KEYWORDS: Numerical simulations, Liquids, Helium, Temperature metrology, Resistance, Instrument modeling, Systems modeling, Phonons

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The paper deals with low-frequency noise in RuO₂-glass thick resistive films at low temperatures. Careful measurements performed with ac technique reveal that below liquid helium temperature and in the low frequency limit excess noise of the films is a pure resistance noise for low bias voltage, but at larger voltages depends sublinearly on voltage square. The model is proposed which shows that the observed noise suppression is due to inhomogeneous heating of devices under test. In this model conduction is via hopping and the noise is due to fluctuation of activation energies of the inter-site conductances. Numerical simulations show that there is an interesting scaling of noise that can be used to identify the local (microscopic) mechanism of heat transfer from electron to phonon systems.

Proceedings Article | 8 April 1996 Paper

Critical point for localization/delocalization transition in 3D metal-insulator systems

A. Stadler, Andrzej Kusy, Roman Sikora

Proceedings Volume 2780, (1996) https://doi.org/10.1117/12.238156

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Numerical studies of dimensionless conductance g in 3D metal-insulator systems have been reported. A discrete lattice site quantum site-percolation model has been defined. It consists of two semi-infinite ideal metal electrodes and a disordered sample of size L multiplied by L multiplied by L located between them. Disorder of the sample is controlled by metal fraction p of conducting particles randomly occupying the sites of cubic lattice with probability p. Tight- binding Hamiltonian with diagonal disorder and probability density of site energies of the form P((epsilon) _n) equals p(delta) ((epsilon) _n) plus (1-p)(delta) ((epsilon) _n - (infinity) ) has been considered. Magnetic field has also been introduced to the model. Conductance g has been calculated using Landauer-Buttiker formula and Green's function technique. It has been found that above classical percolation threshold, that is for p greater than p_c approximately equals 0.312, a second critical point exists denoted as p equals p_q. In the region p_c less than p less than p_q, g approximately equals exp(-L/(xi) _loc), where (xi) _loc is localization length, the system is localized while in the range p greater than p_q conductance tends to indicate g approximately equals L metallic type behavior. By fitting the estimated data of (beta) (g) vs 1ng to the approximate relation for the scaling function (beta) valid in the vicinity of the critical point, critical conductance g_c equals 1.32 plus or minus 0.19 and correlation length critical exponent v equals 1.6 plus or minus 0.2 have been estimated. It has been found that in p less than p_q region the system indicates negative magnetoresistance typical for disorder induced localized states phase, while p greater than p_q range, magnetoresistance is positive as expected for extended states phase.

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