In this paper, we report on the findings that pertain to evaluating the immediate viability of an UV-fiber-laserbased Si crystallization method referred to as spot-beam annealing (SBA). The SBA method leverages ultra-high frequency/low-energy pulses in order to flexibly create optimal conditions for executing various crystallization and annealing techniques for display and semiconductor applications. Specifically, we present recent experimental results that were obtained using a newly constructed SBA system that definitively show that SBA is capable of providing a highly ordered polycrystalline material, which is equivalent to the material generated using stateof-the-art ELA manufacturing systems. We discuss the implication of the results on the effectiveness of the polygon-scanner-based beam delivery schemes, and additional future variations and applications of the SBA method.
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