Prof. Adrián Hierro
at Univ Politécnica de Madrid
SPIE Involvement:
Conference Program Committee | Author
Publications (14)

PROCEEDINGS ARTICLE | February 23, 2018
Proc. SPIE. 10533, Oxide-based Materials and Devices IX
KEYWORDS: Mid-IR, Quantum wells, Magnesium, Data modeling, Doping, Zinc oxide, Absorption

PROCEEDINGS ARTICLE | February 16, 2018
Proc. SPIE. 10527, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
KEYWORDS: Solar energy, Solar cells, Electrons, Gallium arsenide, Antimony, Superlattices

PROCEEDINGS ARTICLE | September 29, 2017
Proc. SPIE. 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017
KEYWORDS: Electrons, Gallium arsenide, Surface roughness, Quantum cascade lasers, Doping, Optoelectronics, Zinc oxide, Heterojunctions, Molecular beam epitaxy, Homoepitaxy

PROCEEDINGS ARTICLE | May 1, 2017
Proc. SPIE. 10105, Oxide-based Materials and Devices VIII
KEYWORDS: Oxides, Quantum wells, Optical properties, Interfaces, Doping, Wide bandgap semiconductors, Zinc oxide, Heterojunctions, Current controlled current source

PROCEEDINGS ARTICLE | April 19, 2017
Proc. SPIE. 10105, Oxide-based Materials and Devices VIII
KEYWORDS: Quantum wells, Magnesium, Sensors, Laser development, Quantum cascade lasers, Terahertz radiation, Zinc oxide, Heterojunctions, Spectroscopes, Absorption

PROCEEDINGS ARTICLE | February 24, 2017
Proc. SPIE. 10105, Oxide-based Materials and Devices VIII
KEYWORDS: Semiconductors, Oxides, Mid-IR, Multilayers, Quantum wells, Polarization, Electrons, Gallium arsenide, Terahertz radiation, Phonons, Zinc oxide, Homoepitaxy, Absorption

Showing 5 of 14 publications
Conference Committee Involvement (4)
Oxide-based Materials and Devices X
3 February 2019 | San Francisco, California, United States
Oxide-based Materials and Devices IX
28 January 2018 | San Francisco, California, United States
Oxide-based Materials and Devices VIII
29 January 2017 | San Francisco, California, United States
Oxide-based Materials and Devices VII
14 February 2016 | San Francisco, California, United States
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