KEYWORDS: Copper, Atomic layer deposition, Ruthenium, Metals, Diffusion, Tantalum, Chemical vapor deposition, Plating, Back end of line, Semiconductors
As dimensions of microprocessor components continue to shrink, new and enabling technologies are required to enable the next generation of (sub)nanometer size features and components. With this aim, the industry has long aspired to gain molecular and even atomic-level control over architectural assembly. Building from the basic principles of chemistry and physics, one of today's technological forefronts in self-assembly and atomic-scale placement is being realized via ALD. Herein, the advances in ALD/CVD with a focus on BEOL interconnect development will be reviewed. Architectural, materials, and integration platforms (barrier, adhesion, seed) will be reviewed. Industrial challenges will be addressed and leading strategies will be considered. Finally, the latest results involving methods and materials will be presented.
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