Prof. A. G. Unil Perera Profile

Prof. A. G. Unil Perera

Regents’ Professor at Georgia State University

SPIE Involvement:

Fellow status | Conference Program Committee | Author

Publications (35)

PROCEEDINGS ARTICLE | May 30, 2017

Infrared spectroscopy as a screening technique for colitis

Proc. SPIE. 10247, Bio-MEMS and Medical Microdevices III

KEYWORDS: Endoscopy, FT-IR spectroscopy, Proteins, Biomedical optics, Spectroscopy, Diagnostics, Infrared spectroscopy, Inflammation, Spectral resolution, Colorectal cancer, Infrared radiation, Sensing systems, Absorbance, Colon, Biological research, Infrared signatures, Attenuated total reflectance

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SPIE Journal Paper | February 7, 2017

Extended wavelength infrared photodetectors

Dilip Chauhan, A. G. Unil Perera, Lianhe Li, Li Chen, Suraj Khanna, Edmund Linfield

OE Vol. 56 Issue 09

KEYWORDS: Aluminum, Sensors, Gallium, Infrared radiation, Photodetectors, Infrared photography, Infrared detectors, Phonons, Lithium, Heterojunctions

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PROCEEDINGS ARTICLE | February 3, 2017

Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier

Proc. SPIE. 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems

KEYWORDS: Infrared detectors, Infrared imaging, Mid-IR, Photodetectors, Photovoltaics, Optical filters, Sensors, Aluminum, Gallium, Heterojunctions

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PROCEEDINGS ARTICLE | May 12, 2016

Infrared photodetector with wavelength extension beyond the spectral limit

Proc. SPIE. 9844, Automatic Target Recognition XXVI

KEYWORDS: Infrared detectors, Infrared sensors, Photodetectors, Optical filters, FT-IR spectroscopy, Solar energy, Sensors, Infrared radiation, Infrared photography, Temperature metrology

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PROCEEDINGS ARTICLE | March 29, 2013

Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage

Proc. SPIE. 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X

KEYWORDS: Long wavelength infrared, Infrared imaging, Mid-IR, Photodetectors, Indium arsenide, Gallium arsenide, Quantum dots, Infrared radiation, Infrared photography, Quantum well infrared photodetectors

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PROCEEDINGS ARTICLE | October 15, 2012

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: FT-IR spectroscopy, Spectroscopy, Crystals, X-ray diffraction, Raman spectroscopy, Infrared spectroscopy, Optoelectronics, Phonons, Reflectance spectroscopy, Indium nitride

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PROCEEDINGS ARTICLE | October 15, 2012

Effect of nucleation period on the physical properties of InN epilayers

Proc. SPIE. 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting

KEYWORDS: FT-IR spectroscopy, Spectroscopy, X-ray diffraction, Dielectrics, Nitrogen, Chemical vapor deposition, Raman spectroscopy, Optoelectronics, Reflectance spectroscopy, Indium nitride

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PROCEEDINGS ARTICLE | May 31, 2012

Demonstration of high responsivity(~2.16 A/W) and detectivity(~1011 Jones) in the long wavelength (~10.2μm) from InGaAs/GaAs quantum dot infrared photodetector with quaternary InAlGaAs capping

Proc. SPIE. 8353, Infrared Technology and Applications XXXVIII

KEYWORDS: Infrared detectors, Photodetectors, Quantum IR detectors, Gallium arsenide, Quantum dots, Infrared radiation, Infrared photography, Heterojunctions, Molecular beam epitaxy, Quantum well infrared photodetectors

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PROCEEDINGS ARTICLE | January 24, 2011

Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier

Proc. SPIE. 7945, Quantum Sensing and Nanophotonic Devices VIII

KEYWORDS: Infrared detectors, Infrared sensors, Photovoltaics, Solar energy, Scattering, Sensors, Gallium arsenide, Aluminum, Superlattices, Absorption

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PROCEEDINGS ARTICLE | May 4, 2010

Spin split-off band-based high operating temperature IR detectors in 3-5 µm and beyond

Proc. SPIE. 7660, Infrared Technology and Applications XXXVI

KEYWORDS: Infrared detectors, Scattering, Sensors, Gallium arsenide, Doping, Sensor performance, Gallium nitride, Terahertz radiation, Phonons, Absorption

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PROCEEDINGS ARTICLE | April 29, 2010

Performance enhancements of dye sensitized nanostructured solar cells using PbS quantum dots

Proc. SPIE. 7683, Energy Harvesting and Storage: Materials, Devices, and Applications

KEYWORDS: Semiconductors, Nanostructuring, Solar cells, Molecules, Quantum dots, Dysprosium, Dye sensitized solar cells, Zinc oxide, Lead, Absorption

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PROCEEDINGS ARTICLE | January 23, 2010

GaAs and GaN based high operating temperature spin split-off band infrared detectors

Proc. SPIE. 7608, Quantum Sensing and Nanophotonic Devices VII

KEYWORDS: Infrared detectors, Infrared sensors, Scattering, Sensors, Gallium arsenide, Doping, Gallium nitride, Terahertz radiation, Phonons, Absorption

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PROCEEDINGS ARTICLE | August 28, 2009

Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors

Proc. SPIE. 7467, Nanophotonics and Macrophotonics for Space Environments III

KEYWORDS: Infrared detectors, Infrared sensors, Sensors, Ultraviolet radiation, Interfaces, Gallium nitride, Capacitance, Aluminum, Heterojunctions, Absorption

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PROCEEDINGS ARTICLE | September 3, 2008

Uncooled semiconductor detectors for IR to UV remote sensing

Proc. SPIE. 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI

KEYWORDS: Infrared detectors, Infrared sensors, Capacitors, Sensors, Ultraviolet radiation, Gallium arsenide, Quantum dots, Infrared detection, Temperature metrology, Absorption

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PROCEEDINGS ARTICLE | March 11, 2008

Ultraviolet-to-infrared dual-band detectors based on quantum dot and heterojunction structures

Proc. SPIE. 6984, Sixth International Conference on Thin Film Physics and Applications

KEYWORDS: Infrared detectors, Infrared sensors, Sensors, Ultraviolet radiation, Quantum dots, Gallium nitride, Infrared radiation, Aluminum, Heterojunctions, Ultraviolet detectors

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PROCEEDINGS ARTICLE | September 26, 2007

Dual band HEIWIP detectors with nitride materials

Proc. SPIE. 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV

KEYWORDS: Infrared sensors, Modulation, Sensors, Etching, Ultraviolet radiation, Gallium nitride, Infrared radiation, Aluminum, Ultraviolet detectors, Absorption

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PROCEEDINGS ARTICLE | February 2, 2007

III-V based THz detectors and plasmon effects

Proc. SPIE. 6479, Quantum Sensing and Nanophotonic Devices IV

KEYWORDS: Oxides, Plasmons, Sensors, Metals, Gallium arsenide, Doping, Gallium nitride, Terahertz radiation, Aluminum, Absorption

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PROCEEDINGS ARTICLE | November 18, 2005

Heterojunction detectors for terahertz applications

Proc. SPIE. 6010, Infrared to Terahertz Technologies for Health and the Environment

KEYWORDS: Sensors, Interfaces, Gallium arsenide, Doping, Gallium nitride, Terahertz radiation, Aluminum, Heterojunctions, Quantum well infrared photodetectors, Absorption

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PROCEEDINGS ARTICLE | September 29, 2005

Quantum structures for multiband photon detection

Proc. SPIE. 5957, Infrared Photoelectronics

KEYWORDS: Infrared detectors, Near infrared, Photodetectors, Quantum wells, Sensors, Gallium arsenide, Silicon, Quantum dots, Infrared radiation, Heterojunctions

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PROCEEDINGS ARTICLE | November 4, 2004

Three-color quantum dots in a well infrared photodetector

Proc. SPIE. 5543, Infrared Spaceborne Remote Sensing XII

KEYWORDS: Long wavelength infrared, Infrared sensors, Mid-IR, Quantum wells, Sensors, Gallium arsenide, Quantum dots, Far infrared, Infrared radiation, Quantum well infrared photodetectors

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PROCEEDINGS ARTICLE | July 1, 2003

Evolution of quantum detectors from VLWIR to FIR

Proc. SPIE. 4999, Quantum Sensing: Evolution and Revolution from Past to Future

KEYWORDS: Infrared detectors, Infrared sensors, Sensors, Gallium arsenide, Silicon, Doping, Far infrared, Aluminum, Quantum well infrared photodetectors, Absorption

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PROCEEDINGS ARTICLE | July 1, 2003

Resonant cavity enhanced GaAs/AlGaAs IR detectors

Proc. SPIE. 4999, Quantum Sensing: Evolution and Revolution from Past to Future

KEYWORDS: Infrared detectors, Infrared sensors, Sensors, Etching, Skin, Gallium arsenide, Doping, Solids, Aluminum, Absorption

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PROCEEDINGS ARTICLE | June 12, 2001

Heterojunction interfacial workfunction detectors for far-infrared applications

Proc. SPIE. 4288, Photodetectors: Materials and Devices VI

KEYWORDS: Sensors, Interfaces, Gallium arsenide, Doping, Capacitance, Far infrared, Aluminum, Heterojunctions, Quantum well infrared photodetectors, Absorption

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PROCEEDINGS ARTICLE | November 29, 2000

Novel Si homojunction far-infrared detectors

Proc. SPIE. 4086, Fourth International Conference on Thin Film Physics and Applications

KEYWORDS: Infrared sensors, Sensors, Silicon, Diffusion, Quantum efficiency, Physics, Doping, Far infrared, Performance modeling, Absorption

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PROCEEDINGS ARTICLE | April 8, 1999

Novel far-infrared detectors for space applications

Proc. SPIE. 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

KEYWORDS: Sensors, Interfaces, Gallium arsenide, Silicon, Quantum efficiency, Doping, Space telescopes, Far infrared, Information operations, Absorption

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PROCEEDINGS ARTICLE | August 21, 1998

GaAs homojunction far-infrared detectors for astronomy applications

Proc. SPIE. 3354, Infrared Astronomical Instrumentation

KEYWORDS: Staring arrays, Astronomy, Scattering, Sensors, Gallium arsenide, Silicon, Quantum efficiency, Doping, Far infrared, Absorption

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PROCEEDINGS ARTICLE | August 11, 1998

Si homojunction internal photoemission far-infrared detectors

Proc. SPIE. 3553, Detectors, Focal Plane Arrays, and Imaging Devices II

KEYWORDS: Staring arrays, Infrared sensors, Sensors, Silicon, Quantum efficiency, Doping, Far infrared, Performance modeling, Molecular beam epitaxy, Absorption

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PROCEEDINGS ARTICLE | April 8, 1998

High-performance GaAs homojunction far-infrared detectors

Proc. SPIE. 3287, Photodetectors: Materials and Devices III

KEYWORDS: Multilayers, Scattering, Sensors, Interfaces, Gallium arsenide, Silicon, Quantum efficiency, Doping, Far infrared, Absorption

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PROCEEDINGS ARTICLE | October 22, 1996

GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors

Proc. SPIE. 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices

KEYWORDS: Sensors, Photons, Interfaces, Gallium arsenide, Silicon, Quantum efficiency, Doping, Neon, Temperature metrology, Absorption

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PROCEEDINGS ARTICLE | June 17, 1996

Infrared detection with spontaneous pulsing in multiquantum well structures

Proc. SPIE. 2746, Infrared Detectors and Focal Plane Arrays IV

KEYWORDS: Quantum wells, Capacitors, Sensors, Electrons, Quantum efficiency, Ionization, Diodes, Infrared radiation, Infrared detection, Absorption

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PROCEEDINGS ARTICLE | September 1, 1995

Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors

Proc. SPIE. 2554, Growth and Characterization of Materials for Infrared Detectors II

KEYWORDS: Infrared detectors, Scattering, Sensors, Interfaces, Silicon, Quantum efficiency, Doping, Neodymium, Internal quantum efficiency, Absorption

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PROCEEDINGS ARTICLE | June 16, 1995

Nonlinear dynamics in a neural network (parallel) processor

Proc. SPIE. 2488, Visual Information Processing IV

KEYWORDS: Interfaces, Linear filtering, Capacitance, Nonlinear dynamics, Diodes, Neural networks, Parallel computing, Nonlinear filtering, Brain mapping, Neurons

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PROCEEDINGS ARTICLE | June 6, 1995

Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

Proc. SPIE. 2475, Infrared Detectors and Instrumentation for Astronomy

KEYWORDS: Scattering, Sensors, Germanium, Electrons, Interfaces, Silicon, Quantum efficiency, Doping, Neodymium, Absorption

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PROCEEDINGS ARTICLE | October 1, 1991

IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices

Proc. SPIE. 1576, 16th International Conference on Infrared and Millimeter Waves

KEYWORDS: Semiconductors, Indium gallium arsenide, Statistical analysis, Sensors, Germanium, Silicon, Transition metals, Far infrared, Infrared detection, Absorption

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PROCEEDINGS ARTICLE | September 1, 1990

Photon detection with parallel-asynchronous processing

Proc. SPIE. 1360, Visual Communications and Image Processing '90: Fifth in a Series

KEYWORDS: Infrared detectors, Photodetectors, Data modeling, Sensors, Image processing, Silicon, Signal processing, Diodes, Visual communications, Semiconducting wafers

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Showing 5 of 35 publications

Conference Committee Involvement (3)

Energy Harvesting and Storage: Materials, Devices, and Applications II

25 April 2011 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications

5 April 2010 | Orlando, Florida, United States

Quantum Sensing: Evolution and Revolution from Past to Future

27 January 2003 | San Jose, CA, United States

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