The effects of both low power laser (He - Ne) of 7.5mW, wavelength 632.8 nm, and conventional thermal (50 - 150°C) treatments on reclamation of two types of silicon solar cells samples have been investigated. Dark and under light current - voltage characteristics have been studied before and after laser and thermal processings. The measurements on both types were done for successive times until a steady state has reached. It is found, that the low power laser has no effects on the dark J - V parameters such as saturation current and ideality factor. However, for solar cell parameters under light measurements at 500W/cm2, it has been found that the treatment causes an increase in the short circuit current density, maximum output power, fill factor and hence the solar cell efficiency.