We propose Terahertz (THz) plasmonic devices based on linearly integrated FETs (LFETs) on Graphene. LFET
structures are advantageous for (THz) detection since the coupling between the THz radiation and the plasma wave is
strongly enhanced over the single gate devices and accordingly higher-order plasma resonances become possible.
AlGaN/GaN heterostructure LFETs with their high sheet carrier concentration and high electron mobility are promising
for plasmonic THz detection. Nevertheless, our numerical studies show that room temperature resonant absorption of
THz radiation by the plasmons in AlGaN/GaN LFETs is very weak even if the integration density is sufficiently large.
Our simulations also demonstrate that similar LFETs on Graphene, which has very large electron mobility, can
resonantly absorb THz radiation up to 5th harmonic at room temperature. Additionally, we investigated LFETs with
integrated cavities on Graphene. Such Periodic Cavity LFETs substantially enhance the quality factor of the resonant