Viewpoint of lithographic performance, the chemically amplified resist (CAR) is still promising candidates for the 32
nm node device manufacturing or below. However, CAR has an issue of low exposure latitude (EL) in the above node.
To overcome the issue, it is important to control the acid diffusion at de-protecting process of the lithography system.
We focused on a monomer unit that is able to control the acid diffusion during the post exposure bake (PEB) process. A
novel secondary ester type methacrylate monomer was designed and synthesized as the unit that generates acid trapping
ability according to the de-protecting reaction. The de-protecting reaction proceeded at general condition, and the acid
trapping ability was confirmed by the model reaction in the solution. The unit must be useful as the adjusting unit of
the acid diffusion. We also investigated the copolymers having this adjusting unit and the typical tertiary ester
de-protecting unit for ArF resist main polymer. We will discuss the feature of the polymer including the de-protecting
unit and its applications for next generation ArF chemically amplified resist.