We have developed an innovated fabrication technology of Si, GaAs, and Ge nano-structures, i.e., we called defect-free neutral beam etching. The technology has been successfully applied to prototype the quantum nano-disks and nano-wires with ferritin based bio-templates. SEM observation verifies that the designed structures are prototyped. Photoluminescence measurements demonstrates high optical quality of nano-structures based on the technology.
The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.
This paper presents a three-dimensional (3D) tapered spot-size converter connecting to silicon wire waveguide and silicon rib waveguide. The silicon 3D structure was essentially formed by a single-step deep anisotropic dry etching of arrayed submicron-scale line patterns with different pitches, resulting in a tailored depth profile which is controlled by the line pattern through loading effect. Subsequent thermal oxidation and removal of the oxidized portion with wet etching led to a bare 3D silicon structure with smooth surface. The optical mode from a 4.6 μm × 3.1 μm silicon rib waveguide was successfully coupled to a 280 nm × 500 nm nanowire waveguide by a silicon 3D tapered spot-size converter, with average coupling loss of 1.52 dB.