Dr. Alain Hoffmann
at Univ Montpellier
SPIE Involvement:
Author
Publications (4)

PROCEEDINGS ARTICLE | May 23, 2005
Proc. SPIE. 5844, Noise in Devices and Circuits III
KEYWORDS: Oxides, Signal to noise ratio, Switches, Switching, Silicon, Interference (communication), Transistors, Field effect transistors, Molybdenum, Instrument modeling

PROCEEDINGS ARTICLE | May 25, 2004
Proc. SPIE. 5470, Noise in Devices and Circuits II
KEYWORDS: Gallium arsenide, Resistance, Magnetism, Gallium nitride, Aluminum nitride, Transistors, Field effect transistors, Metalorganic chemical vapor deposition, Heterojunctions, Temperature metrology

PROCEEDINGS ARTICLE | May 12, 2003
Proc. SPIE. 5113, Noise in Devices and Circuits
KEYWORDS: Oxides, Remote sensing, Dielectrics, Silicon, Amplifiers, Transistors, Field effect transistors, CMOS technology, Molybdenum, Instrument modeling

PROCEEDINGS ARTICLE | May 12, 2003
Proc. SPIE. 5113, Noise in Devices and Circuits
KEYWORDS: Semiconductors, Atrial fibrillation, Data modeling, Silicon, Transistors, Field effect transistors, Analog electronics, Device simulation, Solid modeling, Instrument modeling

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