Dr. Alain Hoffmann
at Univ Montpellier
SPIE Involvement:
Publications (4)

Proceedings Article | 23 May 2005 Paper
C. Leyris, A. Hoffmann, M. Valenza, J.-C. Vildeuil, F. Roy
Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609375
KEYWORDS: Oxides, Field effect transistors, Silicon, Signal to noise ratio, Switching, Instrument modeling, Transistors, Molybdenum, Interference (communication), Switches

Proceedings Article | 25 May 2004 Paper
Sergey Rumyantsev, Michael Shur, Wojciech Knap, Nina Dyakonova, Fabien Pascal, Alain Hoffman, Y. Ghuel, C. Gaquiere, D. Theron
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546748
KEYWORDS: Magnetism, Resistance, Field effect transistors, Heterojunctions, Gallium nitride, Transistors, Aluminum nitride, Temperature metrology, Gallium arsenide, Metalorganic chemical vapor deposition

Proceedings Article | 12 May 2003 Paper
Matteo Valenza, Alain Hoffmann, Frederic Martinez, A. Laigle, Joseph Rhayem, R. Gillon, Marnix Tack
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497578
KEYWORDS: Data modeling, Field effect transistors, Atrial fibrillation, Instrument modeling, Silicon, Analog electronics, Solid modeling, Device simulation, Semiconductors, Transistors

Proceedings Article | 12 May 2003 Paper
Matteo Valenza, Alain Hoffmann, Arnaud Laigle, Dominique Rigaud, Mathieu Marin
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.492906
KEYWORDS: Oxides, Field effect transistors, Transistors, Molybdenum, Silicon, Instrument modeling, Amplifiers, CMOS technology, Dielectrics, Remote sensing

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