Albert Chin received Ph.D. from Department of Electrical Engineering, University of Michigan, Ann Arbor (1989) and B. S. from National Tsing Hua University (1982). He was with AT&T Bell Labs (1989~1990), General Electric- Electronic Lab (1990~1992) and visited Texas Instruments Semiconductor Process & Device Center (1996~1997). He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore (2002~2006). He co-authored >450 papers and 7 “Highly Cited Papers” (top 1% citation). He gave tutorial in Materials Research Society (MRS), invited talks in International Electron Devices Meeting (IEDM), European Solid State Device Research Conf, (ESSDERC), European Materials Research Society (E-MRS), Insulating Films on Semiconductors (INFOS), Intl. Symp. Advanced Gate Stack Tech. (ISAGST), Intl. Solid-State Devices & Materials Conf. (SSDM) etc. Dr. Chin served as panelist in Device Research Conf. (DRC), New Channel Materials for Future MOSFET Technology Workshop, Silicon Nanoelectronics Workshop (SNW), IEEE International Conf. on Solid-State & IC Technology (ICSICT) etc. He also served as the Subcommittee Chair, Asian Arrangements Co-Chair and Chair of IEDM Executive Committee. He is an IEEE Distinguished Lecturer, IEEE Fellow (for contributions to high-K dielectrics & metal gate electrodes for CMOS), Optical Society of America (OSA) Fellow (for contribution to resonantly enhanced photodiodes, sub-ps photo-response applications, and display devices), and Asia-Pacific Academy of Materials (APMC) Academician. He currently serves as Editor of IEEE Electron Device Letters, Technical Committee Chair on Electronic Materials, and Administrative Forum of IEEE Electron Devices Society (EDS).