For the first time films of the As-Se-Te (15≤As≤40, 30≤Se≤65, 5≤Te≤30) chalcogenide system have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low pressure (0.1 Torr). RF (40 MHz) inductively coupled non-equilibrium plasma discharge has been chosen as the initiator of chemical interaction between precursors. Elemental As, Se, and Te of high-purity were used as the initial substances. High-pure argon was utilized as career gas as plasma feed gas. The obtained chalcogenide planar materials have been studied in terms their physical-chemical properties. The films were modified by continuous and femtosecond laser irradiation.