Dr. Alex Buxbaum Profile

Dr. Alex Buxbaum

at Thermofisher Scientific

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Author

Publications (12)

Proceedings Article | 20 March 2020 Presentation + Paper

3D analysis of high-aspect ratio features in 3D-NAND

Jens Timo Neumann, Dmitry Klochkov, Thomas Korb, Sheetal Gupta, Amir Avishai, Ramani Pichumani, Keumsil Lee, Alex Buxbaum, Eugen Foca

Proceedings Volume 11325, 113250M (2020) https://doi.org/10.1117/12.2552006

KEYWORDS: Statistical analysis, Scanning electron microscopy, Semiconducting wafers, Logic, Data acquisition, Tomography, Shape analysis, Metrology

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Proceedings Article | 28 June 2005 Paper

Through-pitch characterization and printability for 65nm half-pitch alternating aperture phase shift applications

Vicky Philipsen, Leonardus Leunissen, Rudi De Ruyter, Rik Jonckheere, Patrick Martin, Clare Wakefield, Stephen Johnson, Michael Cangemi, Alex Buxbaum, Troy Morrison

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617438

KEYWORDS: Etching, Photomasks, Quartz, Semiconducting wafers, Phase shifts, Chromium, Wet etching, Dry etching, Metrology, Chemistry

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Alternating aperture phase shift masks (AAPSM) continue to offer high contrast imaging for 65nm half-pitch using conventional 193nm illumination. The transition to high NA lithography systems including immersion lithography, and the ever-decreasing feature sizes have made the topography of the photomask a significant issue in the final resist image. Therefore, the influence of the alternating phase shift depth, the trench profile, and the critical dimension control through variable feature width must be considered and understood for optimized wafer imaging. This paper will examine the impact on imaging based on three photomasks, each employing different quartz etch chemistries. The three methods used to define the well structures include two all dry and a partial wet etch approach. As the photomask features continue to decrease, slight changes in the quartz etched trench profile and depth can severely affect the wafer prints, as the effective 180 degree phase shift for imaging is not achieved. In this work we correlate the imaging performance through pitch to a systematic evaluation of the photomask topography using complementary photomask metrology techniques. The actual depth and profile of the structures is obtained on a FEI Stylus nano-profilometer (SNP-XT) and from destructive cross sections. The CD linearity is measured on a top-down reticle CD SEM (KLA 8100XR). Based on photomask metrology data, rigorous electro-magnetic field (EMF) simulations of the various topographic profiles are performed. As a first printing performance estimate the photomasks are evaluated on a Zeiss AIMSfab193. Comparisons between the different evaluations will be made against wafer prints, obtained on an ASML PAS5500/1100 ArF scanner working with a 0.75NA projection lens. This study will lead to an understanding of the impact of possible limitations of the current quartz etching processes on the imaging performance of alternating phase-shift masks for 65nm half-pitch.

Proceedings Article | 28 June 2005 Paper

Photomask etch and profile control of 65nm chromeless phase lithography masks using scanning probe metrology

Scott Anderson, Alex Buxbaum, Ajay Kumar, Ibrahim Ibrahim

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617206

KEYWORDS: Etching, Photomasks, Reactive ion etching, Quartz, Lithography, Resolution enhancement technologies, Chromium, Ions, Metrology, 193nm lithography

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Proceedings Article | 6 December 2004 Paper

3D metrology solution for the 65-nm node

Rick Kneedler, Sergey Borodyansky, Dimitri Klyachko, Leonid Vasilyev, Alex Buxbaum, Troy Morrison

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.570122

KEYWORDS: Critical dimension metrology, Photomasks, Metrology, 3D metrology, Atomic force microscopy, Sensors, Scanners, Precision measurement, Edge roughness, Microscopy

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Proceedings Article | 6 December 2004 Paper

Phase standard based on profilometer metrology standard

Gregory Hughes, Cindy Goodman, Gunter Antesberger, Stefan Burges, Troy Morrison, Alex Buxbaum

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.581222

KEYWORDS: Calibration, Photomasks, Metrology, Quartz, Phase shifts, Laser metrology, Profilometers, Phase measurement, Laser optics, Etching

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Proceedings Article | 17 December 2003 Paper

DUV ALTA system aerial image enhancement for improved pattern fidelity

Paul Allen, Alex Buxbaum, Samuel Howells, Boaz Kenan, Asher Klatchko, Peter Pirogovsky, Robin Teitzel, Michael White

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518218

KEYWORDS: Artificial intelligence, Image enhancement, Photomasks, Vestigial sideband modulation, Scanning electron microscopy, Optical proximity correction, Deep ultraviolet, Evolutionary algorithms, Manufacturing, Data conversion

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Proceedings Article | 11 March 2002 Paper

Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution

Alex Buxbaum, Melisa Buie, Brigitte Stoehr, Warren Montgomery, Scott Fuller

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458309

KEYWORDS: Etching, Photomasks, Photoresist processing, Plasma etching, Thin film coatings, Deep ultraviolet, Plasma, Critical dimension metrology, Manufacturing, Reticles

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Proceedings Article | 11 March 2002 Paper

Extended chamber matching and repeatability study for chrome etch

Yi-Chiau Huang, Melisa Buie, Brigitte Stoehr, Alex Buxbaum, Guenther Ruhl

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458344

KEYWORDS: Etching, Photoresist materials, Photomasks, Chlorine, Chromium, Plasma, Manufacturing, Calibration, Optics manufacturing, Dry etching

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Proceedings Article | 11 March 2002 Paper

Endpoint solution for photomask chrome loads down to 0.25%

Melisa Buie, Brigitte Stoehr, Alex Buxbaum, Guenther Ruhl

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458342

KEYWORDS: Etching, Photomasks, Critical dimension metrology, Chromium, Photoresist materials, Emission spectroscopy, Plasma, Plasma etching, Quartz, Chlorine

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Proceedings Article | 5 September 2001 Paper

Photoresist processing for high-resolution DUV lithography at 257 nm

Scott Fuller, Warren Montgomery, Jeff Albelo, William Rodrigues, Alex Buxbaum

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438370

KEYWORDS: Photomasks, Photoresist processing, Critical dimension metrology, Lithography, Photoresist materials, Deep ultraviolet, Diffusion, Manufacturing, Coating, Process control

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Proceedings Article | 24 August 2001 Paper

Photolithographic evaluation of deep UV resist materials for mask-making applications

Warren Montgomery, Alex Buxbaum, William Rodrigues, Jeff Albelo, Scott Fuller

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436813

KEYWORDS: Etching, Photomasks, Photoresist processing, Deep ultraviolet, Critical dimension metrology, Manufacturing, Coating, Lithography, Semiconducting wafers, Chemistry

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Proceedings Article | 1 September 1998 Paper

Performance of the ALTA 3500 scanned-laser mask lithography system

Peter Buck, Alex Buxbaum, Thomas Coleman, Long Tran

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328807

KEYWORDS: Etching, Photomasks, Lithography, Critical dimension metrology, Photoresist processing, Calibration, Dry etching, Anisotropic etching, Wet etching, Plasma etching

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Showing 5 of 12 publications

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