Conductive switching effect in MIS structure may be used for non-volatile memory devices, reprogrammable logic matrix, neuron networks. We investigate possibility of silicon oxide using as active dielectric layer. Unfortunately high quality silicon dioxide can’t provide this property. Dielectric material must have some structural features. Usually silicon rich oxide used for this purpose [1, 2, 3]. One of way producing such material is using plasma of low frequency gas discharge enhanced chemical vapor deposition (LF PECVD). Silane radicals and ions take part in gas phase polymerization. As a result nanoparticles appear in gas phase, and they incorporated in growth film. For producing low size MIS with conductive switching effect high volume density of clusters in deposited films are needs. Influence of technology parameters on volume density of clusters for LF PECVD was investigated, and achieved results presented in this paper.