This paper presents the results of comparative analysis of the electrical and mechanical characteristics of the tungsten and tungsten alloyed with rhenium films deposited on silicon, from the point of view of their use as interconnects in silicon ICs. W and W (Re-5%) alloyed with rhenium films were made by magnetron deposition. Sheet resistivity for W and W (Re- 5%) was 13 and 27 μOhm·cm respectively. Elemental composition the formed films was examined by Auger spectroscopy. To investigate the electromigration resistance of the conductors a methodology based on the accelerated electromigration testing at constant temperature was used. A comparative analysis of the mechanical stresses carried out in the W and W(Re - 5%) films. For this purpose was applied non-destructive method for optical laser scanning. At the same time, these films explored their ability of adhesion to silicon and silicon oxide. It is shown that the pull force of the W(Re - 5%) films was ~1500 G/mm2, of the W films ~ 700 G/mm2
The article dwells upon theoretical considerations on the nature of probe local anodic oxidation. The concept of the process presented here allows for the device intrinsic amperage limitations in the tip-sample system. The work also demonstrates characteristics of height-modulated dielectric mask formation on the solid-state surfaces.
A copper sulfide and bismuth sulfide thin films were deposited on Si/Ti substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric chloride, bismuth chloride, complexing Na2EDTA and sodium sulfide aqueous solutions as precursors. The surface morphology, structural and electrical properties of the as-deposited films were investigated by scanning electron and atomic force microscopy, energy dispersive X-ray analysis (EDS), and 2-point probe methods. The films were found to be amorphous, rough with thickness 30 nm and 20 nm for CuSx and BiSx, respectively. Average atomic percentage of Cu:S and Bi:S in the as-deposited films was calculated as 1:1.5 and 2.3:3. It was noted that films possess resistive switching behavior. Ionic conductivity of the CuSx film was found to be 25,8·10-3 Ohm-1·cm-1 . Ionic conductivity of the BiSx film was found to be 16·10-3 Ohm-1·cm-1. Set voltages UON defined by I-V curves were found to be in the range 0,75-0,8 V/cm for both films. Reset voltages UOFF were found to be in the range 0,6-0,7 V/cm for both films. Thus, formed films can be used as active layers for memory devices application.
We propose approach for modeling thin aluminum film anodization in three dimensions using variation of coupled lattice map on volumetric grid, which is capable of capturing porous and nonporous aluminum oxide growth and electrochemical polishing modes. Model derivation is based on Parkhutik and Shershulsky understandings. Numerical simulation results for various initial conditions are shown and compared to experimental data.