A relatively simple technique of high-energy ion implantation of the pulsed laser plasma under the influence of an
external pulsed electric field is suggested. The developed mathematical model allows forecasting depth distribution of
implanted atoms on the basis of experimental measurements of fundamental physical characteristics of the pulsed laser
plasma and the technical parameters of high-voltage system. The possibility of implantation of platinum ions from laser
plasma to create on-chip <i>n</i>-SiC hydrogen sensor for use in complicated conditions is demonstrated.
Peculiarities of WO<sub>x</sub> films fabrication by reactive pulsed laser deposition for high temperature Pt-oxide-SiC devices
formation were investigated. Deposition of the oxide film was also carried out in such a way as to prevent deposition of
droplet fraction (deposition with anti-droplet screen). Direct Simulation Monte Carlo and Kinetic Monte Carlo methods
were performed for the deposition processes modeling. The response of the SiC-based devices to hydrogen-containing
gases depends on the conditions of deposition of the oxide layer. The best properties were found in the sensor obtained
by depositing the scattered flux of W atoms in a shady area on SiC substrate at an oxygen pressure of 10 Pa.
Results are presented from experimental and theoretical studies of current, dose and energy characteristics of ion beams in the process of ion implantation from pulsed laser plasma containing multicharged ions in an external accelerating electric field. Physical processes in expanding laser-produced plasma are simulated by the particle-in-cell method. The model predicts energy spectra of implanted ions depending on the operation conditions. It has been found both experimentally and theoretically that the current characteristics of the laser plasma expanding from the target to the substrate depend substantially on the time at which the high-voltage accelerating pulse is applied. It is established, that for an effective utilization of double-charged ions in the implantation process it is necessary to realize fast enough turning-on of an external electric field after the laser action on the target. The initiation of high voltage pulse with 50 kV amplitude 0.5 μs after the laser pulse allows realizing the implantation of ions with energy near the 100 keV level. Comparison of experimental and calculated depth distributions shows that the developed model quite adequately describes formation of high-energy components of ion beam which provides the defect formation and alloying of the deep layers of the substrate.