32*288 format FPA based on InSb two dimension arrays (IDA) of photodiodes with function of digital TDI were
investigated at low background flow. Dark currents of TDA photodiodes in wide temperature region, spectral noise
distribution and threshold power with TDI simulation are investigated. It was established that at T=77K dark current is (I -
3)*10-11A at optimal negative bias and decreases in the order of magnitude at T=65K. Threshold power at T=77K at
integration time Ti=6 ms is not more 2*10-14 W/pixel and is limited commonly by dark current noise. Modeling of digital
TDI showed that not more than twenty TDI stages are effective because of the presence of 1/f noise and threshold power
would be at about 3*10-15 W/pixel.
Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of
two dimensional arrays of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and LN2 cryocooler.
Noise equivalent power NEP≈1×10-12 W/pixel and dynamic range 60÷70 dB at frame frequency 250 Hz.
Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of two dimensional anys of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and Split-Stirling cooler. Noise equivalent power NEP≈7•10-13 W/pixel and dynamic range 60÷70 dB at frame frequency (800÷1000) Hz.
This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb - p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384-element p+-on-n diodes formed by Be+-implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6÷8)10-13 W/pixel at 2•10-3 s storage time.