Prof. Alfred R. Adams Profile

Prof. Alfred R. Adams

at Univ of Surrey

SPIE Involvement:

Author

Proceedings Article | 13 March 2019 Presentation

Thermal characteristics of 1.3um InAs-based quantum-dot lasers on silicon substrates (Conference Presentation)

Christopher Fitch, Igor Marko, Aidas Baltusis, Alf Adams, Daehwan Jung, Justin Norman, John Bowers, Stephen Sweeney

Proceedings Volume 10939, 109390Q (2019) https://doi.org/10.1117/12.2506861

KEYWORDS: Semiconductor lasers, Silicon, Quantum dot lasers, Modulation, Temperature metrology, Electrons, Doping

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Proceedings Article | 14 May 2010 Paper

Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Siew Li Tan, Lionel J. Tan, Yu Ling Goh, Shiyong Zhang, Jo Shien Ng, John P. David, Igor Marko, Jeremy Allam, Stephen Sweeney, Alfred Adams

Proceedings Volume 7726, 77261M (2010) https://doi.org/10.1117/12.853912

KEYWORDS: Semiconducting wafers, Annealing, Doping, Oxygen, Calcium, Gallium arsenide, Nitrogen, Photodetectors, Molecular beam epitaxy, Luminescence

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Proceedings Article | 26 January 2009 Paper

The effect of hydrostatic pressure on the operation of quantum cascade lasers

Alfred Adams, Igor Marko, Stephen Sweeney, Roland Teissier, Alexei Baranov, Stanko Tomić

Proceedings Volume 7222, 722203 (2009) https://doi.org/10.1117/12.814322

KEYWORDS: Quantum cascade lasers, Scattering, Laser scattering, Phonons, Laser damage threshold, L band, Indium arsenide, Quantum wells, Mid-IR, Temperature metrology

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Proceedings Article | 29 August 2002 Paper

Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

Alfred Adams, Robin Fehse, Stanko Tomic, Eoin O'Reilly, Aleksey Andreev, Gareth Knowles, Terry Sale, Stephen Sweeney, Gunther Steinle, A. Ramakrishnan, Henning Riechert

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481002

KEYWORDS: Vertical cavity surface emitting lasers, Temperature metrology, Laser damage threshold, Quantum wells, Gallium arsenide, Nitrogen, Solids, Astatine, Optical fibers, Lasers

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Proceedings Article | 12 June 2002 Paper

Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers

Tim Ashley, Alfred Adams, Peter Blood, Alexi Andreev, Theresa Burke, Eoin O'Reilly, Graham Pryce

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470572

KEYWORDS: Aluminum, Antimony, Superlattices, Semiconductor lasers, Mid-IR, FT-IR spectroscopy, Heterojunctions, Temperature metrology, Physics, Molecular beam epitaxy

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Proceedings Article | 6 June 1997 Paper

Calculation of Auger recombination in long-wavelength lasers

Mark Silver, Eoin O'Reilly, Alfred Adams

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275625

KEYWORDS: Quantum wells, Laser damage threshold, Phonons, Instrument modeling, Semiconductor lasers, Heterojunctions, Modeling, Measurement devices, Binary data, Silver

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Proceedings Article | 1 May 1996 Paper

Influence of auger recombination on the temperature sensitivity of bulk and strained quantum well 1.3-um semiconductor lasers

Mark Silver, A. Phillips, Eoin O'Reilly, Alfred Adams

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238994

KEYWORDS: Quantum wells, Laser damage threshold, Temperature metrology, Semiconductor lasers, Heterojunctions, Statistical analysis, Instrument modeling, Measurement devices, Physics, Silver

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Proceedings Article | 1 February 1992 Paper

Strain in semiconductor structures and devices

David Dunstan, Alfred Adams

Proceedings Volume 1523, (1992) https://doi.org/10.1117/12.56995

KEYWORDS: Crystals, Semiconductors, Gallium arsenide, Quantum wells, Silicon, Interfaces, Indium, Heterojunctions, Optical fibers, Absorption

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Proceedings Article | 1 February 1991 Paper

Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors

Igor Czajkowski, Jeremy Allam, Alfred Adams

Proceedings Volume 1362, (1991) https://doi.org/10.1117/12.24541

KEYWORDS: Ionization, Silicon, Electrons, Gallium arsenide, Germanium, Avalanche photodetectors, Optoelectronic devices, Semiconductors, Physics, Monte Carlo methods

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