Prof. Alfred R. Adams
at Univ of Surrey
SPIE Involvement:
Publications (10)

Proceedings Article | 13 March 2019
Proc. SPIE. 10939, Novel In-Plane Semiconductor Lasers XVIII
KEYWORDS: Modulation, Electrons, Silicon, Doping, Semiconductor lasers, Quantum dot lasers, Temperature metrology

Proceedings Article | 14 May 2010
Proc. SPIE. 7726, Optical Sensing and Detection
KEYWORDS: Photodetectors, Annealing, Luminescence, Gallium arsenide, Calcium, Nitrogen, Doping, Oxygen, Semiconducting wafers, Molecular beam epitaxy

Proceedings Article | 26 January 2009
Proc. SPIE. 7222, Quantum Sensing and Nanophotonic Devices VI
KEYWORDS: Mid-IR, Quantum wells, Indium arsenide, Scattering, Laser scattering, Quantum cascade lasers, L band, Phonons, Laser damage threshold, Temperature metrology

Proceedings Article | 29 August 2002
Proc. SPIE. 4905, Materials and Devices for Optical and Wireless Communications
KEYWORDS: Optical fibers, Quantum wells, Lasers, Gallium arsenide, Nitrogen, Solids, Laser damage threshold, Vertical cavity surface emitting lasers, Astatine, Temperature metrology

Proceedings Article | 12 June 2002
Proc. SPIE. 4646, Physics and Simulation of Optoelectronic Devices X
KEYWORDS: Mid-IR, FT-IR spectroscopy, Physics, Semiconductor lasers, Aluminum, Antimony, Heterojunctions, Superlattices, Molecular beam epitaxy, Temperature metrology

Showing 5 of 10 publications
Conference Committee Involvement (7)
Infrared Optoelectronics: Materials and Devices
4 September 2012 | Evanston, Illinois, United States
Optoelectronic Materials and Devices III
27 October 2008 | Hangzhou, China
Optoelectronic Materials and Devices
2 November 2007 | Wuhan, China
Optoelectronic Materials and Devices for Optical Communications
7 November 2005 | Shanghai, China
Semiconductor and Organic Optoelectronic Materials and Devices
9 November 2004 | Beijing, China
Showing 5 of 7 Conference Committees
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