In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in
semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch
processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous
Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type
stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary
conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one
point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.