Carbon thin films can be prepared with properties that make them suitable for applications in electronics including heat
sinks, electrical interconnects transistors and chemical sensors. In this work, we examine the microstructure and
normalised through film electrical resistance of oriented and non-oriented carbon films deposited onto silicon substrates
at room temperature using a Filtered Cathodic Vacuum Arc (FCVA). Electrical measurements have also been performed
on carbon films which were lithographically patterned to produce test structures resembling vertical interconnects. Twopoint,
through-film current-voltage measurements of NiCr/Carbon/Si structures showed that the electrical resistance of
the carbon films could be varied by several orders of magnitude simply by selecting different substrate bias voltages.
Importantly, carbon films composed of vertically aligned graphene sheets were found to provide low resistance, linear
current-voltage characteristics, indicating the formation of Ohmic junctions at the NiCr and Si interfaces of the
NiCr/Carbon/Si structure.
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