PROCEEDINGS ARTICLE | October 20, 2006
Proc. SPIE. 6349, Photomask Technology 2006
KEYWORDS: Wafer-level optics, Chromatic aberrations, Data modeling, Calibration, Etching, Particles, Scanning electron microscopy, Photomasks, Semiconducting wafers, Performance modeling
We present a methodology for building through-process, physics-based litho and etch models which result in accurate and predictive models. The litho model parameters are inverted using resist SEM data collected on a set of test-structures for a set of exposure dose and defocus conditions. The litho model includes effects such as resist diffusion, chromatic aberration, defocus bias, lens aberrations, and flare. The etch model, which includes pattern density and particle collision effects, is calibrated independently of the litho model, using DI and FI SEM measurements. Before being used for mask optimization, the litho and etch models are signed-off using a set of verification structures. These verification structures, having highly two-dimensional geometries, are placed on the test-reticle in close vicinity to the calibration test-structures. Using through-process DI and FI measurement and images from verification structures, model prediction is compared to wafer results, and model performance both in terms of accuracy and predictability is thus evaluated.
