The predictive simulation of the formation of voids in interconnect lines is important for improving capacitance and timing in current memory cells. The cells considered are used in wireless applications such as cell phones, pagers, radios, handheld games, and GPS systems. In backend processes for memory cells, ILD (interlayer dielectric) materials and processes result in void formation during gap fill. This approach lowers the overall k-value of a given metal
layer and is economically advantageous. The effect of the voids on the overall capacitive load is tremendous. In order to simulate the shape and positions of the voids and thus the overall capacitance, the topography simulator ELSA (Enhanced Level Set Applications) has been developed which consists of three modules, a level set module, a radiosity module, and a surface reaction module. The deposition process considered is deposition of silicon nitride. Test structures of interconnect lines of memory cells were fabricated and several SEM images thereof were used to validate the corresponding simulations.