In this work, self-mode-locking of 100 GHz mode-locked pulses from a single-section InP quantum-dash-based laser chip whilst employed in external cavity geometry at 1550nm is investigated. The chip is operated at a forward current marginally above its monolithic operation's lasing threshold. Ultrashort pulses with 1 ps pulse- width were obtained by compensating the chirp by a single mode fiber (SMF).
In this work, a comparison of self-mode-locking of a 100 GHz repetition-rate monolithic diode as a stand-alone laser source and whilst employed in an external cavity arrangement at 1550 nm is reported. We operated our chip at a forward current slightly above the monolithic chip's lasing threshold and compensated the chirp by a single mode fiber. Ultrashort pulses with 1 ps pulse-width were generated. Changes in the dispersion compensation parameters due to the changed cavity dispersion were analyzed.