A copper sulfide and bismuth sulfide thin films were deposited on Si/Ti substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric chloride, bismuth chloride, complexing Na2EDTA and sodium sulfide aqueous solutions as precursors. The surface morphology, structural and electrical properties of the as-deposited films were investigated by scanning electron and atomic force microscopy, energy dispersive X-ray analysis (EDS), and 2-point probe methods. The films were found to be amorphous, rough with thickness 30 nm and 20 nm for CuSx and BiSx, respectively. Average atomic percentage of Cu:S and Bi:S in the as-deposited films was calculated as 1:1.5 and 2.3:3. It was noted that films possess resistive switching behavior. Ionic conductivity of the CuSx film was found to be 25,8·10-3 Ohm-1·cm-1 . Ionic conductivity of the BiSx film was found to be 16·10-3 Ohm-1·cm-1. Set voltages UON defined by I-V curves were found to be in the range 0,75-0,8 V/cm for both films. Reset voltages UOFF were found to be in the range 0,6-0,7 V/cm for both films. Thus, formed films can be used as active layers for memory devices application.
The features of the formation of multi-component metal sulfide films (Cu2ZnSnS4 and Cu2SnS3) formed by various methods SILAR technology were studied. Using different investigate methods the comparative analysis of the properties and composition of the films were carry out. The formation of a multi-component film in the mixed cationic solution is accompanied by additional processes in the solution and by the appearance of complex compounds. This factors has a strong influence on the composition and purity of the formed films. The characteristics of the solar cell test structures with ultrathin absorbing layer based on Cu2ZnSnS4 and Cu2SnS3 were obtained. It’s necessity to introduce an interlayer and make more carefully study of the composition and interface of the absorber layer.
In present work the influence of anodizing process parameters on PAOT geometric parameters for optimizing and increasing ETA-cell efficiency was studied. During the calculations optimal geometrical parameters were obtained. Parameters such as anodizing current density, electrolyte composition and temperature, as well as the anodic oxidation process time were selected for this investigation. Using the optimized TiO2 photoelectrode layer with 3,6 μm porous layer thickness and pore diameter more than 80 nm the ETA-cell efficiency has been increased by 3 times comparing to not nanostructured Ti<sub>O2 </sub>photoelectrode.