Dr. Anders Elfving Profile

Dr. Anders Elfving

at Swedish Defence Research Agency

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Publications (6)

Proceedings Article | 11 May 2012 Paper

Time-of-flight mass spectrometry for explosives trace detection

Anna Pettersson, Anders Elfving, Mattias Elfsberg, Tomas Hurtig, Niklas Johansson, Ahmed Al-Khalili, Petra Käck, Sara Wallin, Henric Östmark

Proceedings Volume 8357, 83571I (2012) https://doi.org/10.1117/12.919156

KEYWORDS: Particles, Ionization, Explosives, Solar concentrators, Electrodes, Explosives detection, Foam, Calibration, Sensors, Molecules

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Proceedings Article | 20 October 2011 Paper

Discrimination of new and aged post-blast explosives residues

Helena Hansson, Anders Elfving, Dennis Menning, Hans Önnerud, Erik Holmgren, Mona Brantlind, Ulla Hedebrant, Henric Östmark, Rose-Marie Karlsson, Patrick Goede

Proceedings Volume 8189, 818903 (2011) https://doi.org/10.1117/12.898183

KEYWORDS: Explosives, Improvised explosive devices, Statistical analysis, Chromatography, Spectroscopy, Visualization, Mass spectrometry, Explosives detection, Error control coding, Minerals

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Proceedings Article | 14 May 2010 Paper

Low cost, high performance far infrared microbolometer

Audun Roer, Adriana Lapadatu, Anders Elfving, Gjermund Kittilsland, Erling Hohler

Proceedings Volume 7726, 77260Z (2010) https://doi.org/10.1117/12.855784

KEYWORDS: Semiconducting wafers, Readout integrated circuits, Wafer bonding, Bolometers, Infrared bolometers, Sensors, Staring arrays, Infrared radiation, Oxides, Far infrared

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Proceedings Article | 14 May 2010 Paper

Low-cost uncooled microbolometers for thermal imaging

Niclas Roxhed, Frank Niklaus, Andreas Fischer, Fredrik Forsberg, Linda Höglund, Per Ericsson, Björn Samel, Stanley Wissmar, Anders Elfving, Tor Ivar Simonsen, Kaiying Wang, Nils Hoivik

Proceedings Volume 7726, 772611 (2010) https://doi.org/10.1117/12.855752

KEYWORDS: Bolometers, Semiconducting wafers, Wafer bonding, Germanium, Tin, Infrared bolometers, Copper, Readout integrated circuits, Microelectromechanical systems, Quantum wells

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Cost efficient integration technologies and materials for manufacturing of uncooled infrared bolometer focal plane arrays (FPA) are presented. The technology platform enables 320x240 pixel resolution with a pitch down to 20 μm and very low NETD. A heterogeneous 3D MEMS integration technology called SOIC (Silicon-On-Integrated-Circuit) is used to combine high performance Si/SiGe bolometers with state-of-the-art electronic read-out-integrated-circuits. The SOIC integration process consists of: (a) Separate fabrication of the CMOS wafer and the MEMS wafer. (b) Adhesive wafer bonding. (c) Sacrificial removal of the MEMS handle wafer. (d) Via-hole etching. (e) Via formation and MEMS device definition. (f) Sacrificial etching of the polymer adhesive. We will present an optimized process flow that only contains dry etch processes for the critical process steps. Thus, extremely small, sub-micrometer feature sizes and vias can be implemented for the infrared bolometer arrays. The Si/SiGe thermistor is grown epitaxially, forming a mono-crystalline multi layer structure. The temperature coefficient of resistance (TCR) is primarily controlled by the concentration of Ge present in the strained SiGe layers. TCR values of more than 3%/K can be achieved with a low signal-to-noise ratio due to the mono-crystalline nature of the material. In addition to its excellent electrical properties, the thermistor material is thermally stable up to temperatures above 600 °C, thus enabling the novel integration and packaging techniques described in this paper. Vacuum sealing at the wafer level reduces the overall costs compared to encapsulation after die singulation. Wafer bonding is performed using a Cu-Sn based metallic bonding process followed by getter activation at ≥350 °C achieving a pressure in the 0.001 mbar range. After assembling, the final metal phases are stable and fully compatible with hightemperature processes. Hermeticity over the product lifetime is accomplished by well-controlled electro-deposition of metal layers, optimized bonding parameters and a suitable bond frame design.

Proceedings Article | 4 May 2010 Paper

High-performance long wave infrared bolometer fabricated by wafer bonding

Adriana Lapadatu, Gjermund Kittilsland, Anders Elfving, Erling Hohler, Terje Kvisterøy, Thor Bakke, Per Ericsson

Proceedings Volume 7660, 766016 (2010) https://doi.org/10.1117/12.852526

KEYWORDS: Semiconducting wafers, Wafer bonding, Readout integrated circuits, Bolometers, Oxides, Copper, Germanium, Staring arrays, Infrared bolometers, Etching

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Proceedings Article | 7 February 2006 Paper

Compositional analysis of Si/SiGe quantum dots using STEM and EDX

A. Karim, A. Elfving, M. Larsson, W.-X. Ni, G. Hansson

Proceedings Volume 6129, 61290C (2006) https://doi.org/10.1117/12.647318

KEYWORDS: Germanium, Silicon, Scanning transmission electron microscopy, Luminescence, Temperature metrology, Quantum dots, X-rays, Spectroscopy, Sensors, Diffusion

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Showing 5 of 6 publications

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