Dr. Andreas Erdmann Profile

Dr. Andreas Erdmann

Head of Computational Lithography & Optics at Fraunhofer IISB

SPIE Involvement:

Conference Program Committee | Author | Editor | Instructor

Area of Expertise:

lithography , nanooptics , diffraction modeling , image modeling , optical design , physical optics

Publications (176)

Proceedings Article | 20 November 2024 Presentation + Paper

Integrated mask process modeling for better yield predictions

A. Awad, C. Behroozi, A. Erdmann

Proceedings Volume 13216, 132161W (2024) https://doi.org/10.1117/12.3035191

KEYWORDS: Scanning electron microscopy, Process modeling, Semiconducting wafers, Design, Manufacturing, Lithography, Data modeling, Modeling, Image processing, Raster graphics

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SPIE Journal Paper | 8 October 2024 Open Access

Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

JM3, Vol. 24, Issue 01, 011002, (October 2024) https://doi.org/10.1117/12.10.1117/1.JMM.24.1.011002

KEYWORDS: Photomasks, Light sources and illumination, Surface plasmons, Semiconducting wafers, Resolution enhancement technologies, Source mask optimization, Nanoimprint lithography, Near field, Diffraction, Lithography

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BackgroundThe lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffraction and contrast fading caused by 3D mask effects. The dual monopole concept has been proposed by Joern-Holger Franke to mitigate contrast fading for line-space (L/S) patterns.AimWe employ various modeling techniques to investigate the extendibility of dual monopole or split pupil exposures (SPs) to dense arrays of contacts on dark field and light field masks using different mask absorber options.ApproachFirst, a semi-analytic model is introduced to understand the relevant imaging mechanisms of split pupil exposures for L/S patterns. Next, we apply the split pupil exposure to a regular array of contact holes on a dark field mask. A multi-objective optimization approach helps to identify general trends and specific solutions. Analysis of the near fields of the light reflected from the mask for these particular solutions provides further insights into the imaging mechanisms of split pupil exposures and the different behavior of dark field (DF) and light field (LF) masks. Investigations for several mask absorber materials, tonalities, source fillings, and target sizes demonstrate the application of SP to different use-case scenarios.ResultsOur simulations indicate that split pupil exposures benefit 1D (L/S) and 2D (arrays of contacts/pillars) features. The achievable gain compared with a single exposure (SE) depends on tonality, source filling, absorber material, and target size. The application of SP significantly impacts source mask optimization (SMO). SP affects optical proximity correction (OPC) and optimum source shape and may even modify the optimum absorber thickness. The combination of low-n absorbers, SP, and multi-objective SMO enables the identification of the best imaging solutions and pushes low k1 high-numerical aperture (NA) imaging to its ultimate limits.ConclusionsSplit pupil exposures can provide a promising addition to the toolbox of resolution enhancement techniques for low k1 high-NA lithography and unleash the full potential of low-n/low-k absorber materials.

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Proceedings Article | 18 September 2024 Paper

Imaging effects of particles on the surface of EUV mask and wafer

Rawan Semaan, Gerardo Bottiglieri, Andreas Erdmann, Gijsbert Rispens, Laurens de Winter, Steven Beekmans

Proceedings Volume 13273, 1327306 (2024) https://doi.org/10.1117/12.3027067

KEYWORDS: Particles, Scanners, Semiconducting wafers, Simulations, Extreme ultraviolet, Tolerancing, Extreme ultraviolet lithography, Printing, Particle contamination, Defect inspection, Mask cleaning, Computational imaging

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Proceedings Article | 18 September 2024 Paper

Modeling of multi-trigger resists

Thiago dos Santos, Zelalem Belete, Andreas Erdmann, Alex P. Robinson, Carmen Popescu, Alexandra McClelland

Proceedings Volume 13273, 1327308 (2024) https://doi.org/10.1117/12.3027941

KEYWORDS: Photoresist materials, Line width roughness, Extreme ultraviolet lithography, Calibration, Lithography, Critical dimension metrology, Photoresist developing, Computational lithography

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Proceedings Article | 18 June 2024 Presentation + Paper

Modelling and compensating proximity effects in massively parallelized multiphoton photoplotter

F. Ogor, T. Le Deun, V. Sedova, J. Rovera, A. Erdmann, M. Flury, K. Heggarty

Proceedings Volume 12995, 1299509 (2024) https://doi.org/10.1117/12.3016932

KEYWORDS: Fabrication, 3D modeling, Spatial light modulators, Polymerization, Diffractive optical elements, Device simulation, Modeling, Image processing, Geometrical optics, Diffusion

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Proceedings Article | 18 June 2024 Presentation

Digital modelling of a massively parallelized multiphoton polymerization plot process

Joël Rovera, Valeriia Sedova, Florie Ogor, Andreas Erdmann, Kevin Heggarty

Proceedings Volume PC13023, PC1302309 (2024) https://doi.org/10.1117/12.3017550

KEYWORDS: Fabrication, Polymerization, Modeling, Multiphoton processes, 3D modeling, Spatial light modulators, Pulsed laser operation, Optical lithography, Diffractive optical elements, Device simulation

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Proceedings Article | 17 June 2024 Presentation + Paper

3D EUV mask simulator based on physics-informed neural networks: effects of polarization and illumination

V. Medvedev, A. Erdmann, A. Rosskopf

Proceedings Volume 13023, 1302304 (2024) https://doi.org/10.1117/12.3013159

KEYWORDS: Light sources and illumination, Extreme ultraviolet, Simulations, Polarization, Deep learning, Computational lithography, Lithography, Scattering, Maxwell equations

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Background: To enable the manufacturing of advanced semiconductor devices, EUV lithography has been continuously shrinking the lateral dimensions of the mask and features. Resulting complex diffraction, polarization, and oblique illumination effects require rigorous modeling of EUV light diffracted from the mask. Traditional electromagnetic field (EMF) solvers are inefficient for large field-of-view simulations, while deep neural networks rely on a huge amount of expensive rigorously simulated or measured data. [1] Aim: Building upon our prior research [2], which revealed the PINN’s potential and enabled sufficient aerial image simulation of small features, this study aims to broaden the scope of PINN’s applications. Specifically, we extend this work towards the investigation of polarization effects and variable illumination settings. Approach: The established PINN model [2] was employed for EUV mask simulations under various illumination directions to investigate the orientation dependence of lithographic patterning. Expressing the residual of 3D Maxwell’s equations, we effectively decoupled the transverse electric (TE) and transverse magnetic (TM) modes of EUV light. Employing a vectorial formulation of the wave equation, we investigated the ability of the PINN approach to predict the generation of additional electric field components resulting from the scattering at the absorber edges. Results: PINN accurately predicts the polarization effects that are relatively small, but still notable close to the absorber edges and inside the multilayer. The generalized PINN-based solver, adapted for arbitrary illumination settings, demonstrates the significant impact of the illumination direction and exposure wavelength on the reflected EUV light. PINN captures asymmetries in the near field caused by off-axis illumination and the significant drop in the intensity of the reflected light for larger incidence angles. Conclusions: By pushing the application limits of the existing PINN approach, we demonstrated its capability to accurately model oblique illumination effects, polychromatic effects, and even the weak polarization effects in the EUV spectral range. Different from numerical solvers, a universal PINN-based mask solver can simulate light scattering response in several milliseconds for arbitrary mask geometries and illumination settings without re-training.

Proceedings Article | 17 June 2024 Presentation + Paper

Advances in modeling and optimization for two-photon lithography

Valeriia Sedova, Florie Ogor, Joёl Rovera, Odysseas Tsilipakos, Lisa Lemberg, Kevin Heggarty, Andreas Erdmann

Proceedings Volume 13023, 1302309 (2024) https://doi.org/10.1117/12.3017407

KEYWORDS: Voxels, Polymerization, Data modeling, Fabrication, Diffusion, Two photon polymerization, Modeling, Lithography, Photoresist materials, 3D modeling

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Proceedings Article | 10 April 2024 Presentation + Paper

Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

Proceedings Volume 12953, 1295302 (2024) https://doi.org/10.1117/12.3009996

KEYWORDS: Photomasks, Light sources and illumination, Source mask optimization, Lithography, Near field, Diffraction

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Proceedings Article | 10 April 2024 Presentation + Paper

3D mask simulation and lithographic imaging using physics-informed neural networks

V. Medvedev, A. Erdmann, A. Rosskopf

Proceedings Volume 12953, 129530N (2024) https://doi.org/10.1117/12.3010466

KEYWORDS: 3D mask effects, Lithography, Extreme ultraviolet, Education and training, Light sources and illumination, Diffraction, Computer simulations, Modeling, Near field, Waveguides, Deep learning, Computational lithography

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Proceedings Article | 22 November 2023 Presentation

Predicting resist pattern collapse in EUVL using machine learning

Sean D'Silva, Raghunandan Arava, Andreas Erdmann, Thomas Muelders, Hans-Juergen Stock

Proceedings Volume PC12750, PC127500I (2023) https://doi.org/10.1117/12.2691987

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Proceedings Article | 5 October 2023 Paper

Predicting resist pattern collapse in EUVL using machine learning

Sean D'Silva, Raghunandan Arava, Andreas Erdmann, Thomas Mülders, Hans-Jürgen Stock

Proceedings Volume 12802, 1280206 (2023) https://doi.org/10.1117/12.2675700

KEYWORDS: Extreme ultraviolet lithography, Machine learning, Deformation, Liquids, Capillaries, Line width roughness, Image classification, Simulations, Point clouds

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Pattern collapse has become a problem area in lithographic manufacturing due to the added complexity as we move towards extreme ultraviolet (EUV) focused mass production of semiconductor devices. Collapse is influenced mainly by the geometry and mechanical properties of the pattern. Photoresist patterns with higher aspect ratios (ARs) or lower feature spacing (dense features) are prone to collapse. This, combined with a lower stiffness value (Young’s modulus), adds to the undesirable deformation of patterns at the wafer level as we move towards advanced technology nodes. Such a deformation in the resist is seen after the rinsing stage and is caused mainly due to the non-uniform drying of the rinse liquid after chemical development. The main causes of this are the unbalanced Laplace pressure ΔP difference across the liquid-air interface and the surface tension force (STF) along the three-phase line. In addition to that, the sidewall surface roughness leads to localized regions of higher aspect ratios which makes collapse modeling in EUV lithography more challenging. The irregular variation in the aspect ratios increases the risk of collapse and also requires additional model considerations. A machine learning (ML) based approach is introduced to predict deformation characteristics for rough cross-sections (XZ plane) which is then utilized for the computation of the overall deformation of an entire lines and spaces (L/S) pattern. The 3D profiles are converted into a 2D representation using modified Fisher vectors (FVs) and labeled based on the estimated deformation of the given rough profile. A convolutional neural network (CNN) is then trained with the data generated and used to predict collapse probabilities for a given data set. For the prediction of collapse in pillar patterns, a slightly different ML-based approach is used based on the cross sections in the XY plane. A finite element method (FEM) model is implemented to calculate the deformations δ for a given pillar arrangement which then serve as labels for the training data. The cross-sections are stacked together along the height/thickness and a 3D convolutional neural network is trained and used for collapse prediction.

Proceedings Article | 26 September 2023 Presentation

Imaging performance of low-n absorbers at the optical resolution limits of high NA EUV systems

Andreas Erdmann

Proceedings Volume PC12915, PC129150F (2023) https://doi.org/10.1117/12.3012444

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Proceedings Article | 30 April 2023 Presentation

Training data selection and optimization for EUV lithography deep learning models

Abdalaziz Awad, Philipp Brendel, Bappaditya Dey, Sandip Halder, Andreas Erdmann

Proceedings Volume 12495, 124951I (2023) https://doi.org/10.1117/12.2658411

KEYWORDS: Data modeling, Lithography, Scanning electron microscopy, Extreme ultraviolet lithography, Computer simulations

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Proceedings Article | 1 December 2022 Paper

Precise optical constants: determination and impact on metrology, simulation, and development of EUV masks

Qais Saadeh, Hazem Mesilhy, Victor Soltwisch, Andreas Erdmann, Richard Ciesielski, Leonhard Lohr, Anna Andrle, Vicky Philipsen, Devesh Thakare, Christian Laubis, Frank Scholze, Michael Kolbe

Proceedings Volume 12293, 122930Y (2022) https://doi.org/10.1117/12.2643246

KEYWORDS: Extreme ultraviolet, Scatterometry, Photomasks, Refractive index, Scattering, Reflectivity, Metrology, Databases, Oxidation, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet coatings, Modeling and simulation, Optical constants, Optical metrology

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Proceedings Article | 1 November 2022 Paper

3D mask defect and repair simulation based on SEM images

Vlad Medvedev, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 12472, 1247208 (2022) https://doi.org/10.1117/12.2637978

KEYWORDS: Photomasks, Scanning electron microscopy, Lithography, Feature extraction, 3D image processing

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Proceedings Article | 15 September 2022 Presentation

The EUV mask exposed

Vicky Philipsen, Devesh Thakare, Dongbo Xu, Ling Ee Tan, Jetske Stortelder, Mike Cooke, Andy Goodyear, Victor Soltwisch, Qais Saadeh, Sascha Brose, Andreas Erdmann

Proceedings Volume PC12325, PC123250B (2022) https://doi.org/10.1117/12.2641306

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Proceedings Article | 13 June 2022 Presentation

Data efficient deep learning for imaging with novel EUV mask absorbers

Abdalaziz Awad, Philipp Brendel, Andreas Erdmann

Proceedings Volume PC12051, PC120510H (2022) https://doi.org/10.1117/12.2613954

KEYWORDS: Data modeling, Photomasks, Extreme ultraviolet, Waveguides, Waveguide modes, Lithography

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Proceedings Article | 13 June 2022 Presentation

EUV mask absorber induced best focus shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume PC12051, PC1205108 (2022) https://doi.org/10.1117/12.2614174

KEYWORDS: Extreme ultraviolet, Refractive index, Nanoimprint lithography, High volume manufacturing, Extreme ultraviolet lithography, Diffraction, 3D printing, 3D image processing

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SPIE Journal Paper | 11 May 2022 Open Access

Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky

JM3, Vol. 21, Issue 02, 020901, (May 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.020901

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Phase shifts, Refractive index, Extreme ultraviolet lithography, Resolution enhancement technologies, Deep ultraviolet, Reflectivity, Lithography

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Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tradeoff between resolution, linewidth roughness and sensitivity, and the adaptation of optical resolution enhancements that were originally developed for deep ultraviolet (DUV) lithography. Aim: We review published research on attenuated phase shift masks (attPSM) for EUV with special emphasis on modeling and fundamental understanding of the imaging characteristics of alternative absorber materials. The overview on previous work is intended to summarize typical observations and learning on obtained results and to serve as a reference for further research on this important topic. Review approach: The review starts with a summary of related work on attPSM for DUV lithography. It is shown that the understanding and mitigation of mask topography (or mask 3D) effects is key for the analysis and optimization of attPSM for EUV lithography. Observations from several research groups and application of dedicated modeling approaches help to understand the physical mechanisms behind observed lateral image shifts and pitch-dependent shifts of the best focus position. Results: The imaging physics of attPSM for EUV lithography differs significantly from attPSM imaging in DUV lithography. The “double diffraction” of EUV light from the absorber, the reflection characteristics of the multilayer blank, and the guidance of light through the openings in a low-refractive-index (low-n) absorber introduce important effects that need to be considered in the design and use of attPSM in EUV lithography. It is important to use the optical properties (n and k) and the thickness of the absorber as predictive design parameters of attPSM for EUV lithography (instead of phase and reflectivity). The refractive index of the absorber material is important for binary masks as well. The discussion of low-n absorbers includes both “traditional” attPSM for EUV and low reflectivity absorbers, which exploit the guidance of light inside patterned layers. Conclusions: In-depth modeling investigations of attPSM and first experiments suggest that absorbers with a refractive index around 0.9 (low-n materials) can help to push high NA EUV lithography into the low k1 regime. Comprehensive optimization of source and mask is required to exploit the advantages of low-n absorbers. Further enhancements can help to push EUV imaging to its ultimate limit.

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SPIE Journal Paper | 16 November 2021 Open Access

Accurate prediction of EUV lithographic images and 3D mask effects using generative networks

Abdalaziz Awad, Philipp Brendel, Peter Evanschitzky, Dereje Woldeamanual, Andreas Rosskopf, Andreas Erdmann

JM3, Vol. 20, Issue 04, 043201, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.043201

KEYWORDS: 3D modeling, Photomasks, 3D image processing, Extreme ultraviolet, Data modeling, Lithography, Extreme ultraviolet lithography, Process modeling, Computer programming, 3D acquisition

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Proceedings Article | 18 October 2021 Presentation + Paper

Modeling of grayscale lithography and calibration with experimental data for blazed gratings

Pankaj Bhardwaj, Andreas Erdmann, Robert Leitel

Proceedings Volume 11875, 118750K (2021) https://doi.org/10.1117/12.2597203

KEYWORDS: Calibration, Photoresist materials, Grayscale lithography, Photomasks, Diffraction gratings, Lithography, Data modeling, Transmittance, Photoresist developing

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Proceedings Article | 12 October 2021 Presentation + Paper

Simulation of polychromatic effects in high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Qais Saadeh, Victor Soltwisch, Simon Bihr, Jörg Zimmermann, Vicky Philipsen

Proceedings Volume 11854, 1185405 (2021) https://doi.org/10.1117/12.2600931

KEYWORDS: Photomasks, Mirrors, Extreme ultraviolet, Diffraction, Reflectivity, Extreme ultraviolet lithography, Lithography, Phase shifts, Imaging systems

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SPIE Journal Paper | 5 October 2021 Open Access

Mask defect detection with hybrid deep learning network

Peter Evanschitzky, Nicole Auth, Tilmann Heil, Christian Hermanns, Andreas Erdmann

JM3, Vol. 20, Issue 04, 041205, (October 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041205

KEYWORDS: Scanning electron microscopy, Defect detection, Photomasks, Image segmentation, Image processing, Lithography, Network architectures, Image filtering, Machine learning, Image classification

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Proceedings Article | 29 September 2021 Presentation

Pathfinding the perfect EUV mask: understanding the EUV mask using the hybrid mask model

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume 11854, 118540U (2021) https://doi.org/10.1117/12.2601243

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Refractive index, Systems modeling, Reflectivity, Phase shifts, Mirrors, Lithographic illumination, Extreme ultraviolet lithography

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We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and multilayer part. Both parts can be described by real 3D objects or idealized 2D objects. An idealized absorber is specified by the transmission tr and phase of the transmitted light. An idealized multilayer mirror is characterized by a certain reflectivity value, by an angular range or bandwidth (BW) where the light is reflected and by a distance Zeff from the absorber. The diffraction of the incident light by the absorber, the reflection of the diffracted light by the multilayer mirror, and the second diffraction of the reflected light by the absorber are combined by transfer matrices. The obtained superposed diffraction orders provide characteristic diffraction efficiencies and phase values of discrete orders. The presented analysis of the light diffraction from EUV mask and resulting imaging metrics provides several novel insights into the root causes of M3D effects in high NA EUV imaging. The combination of double diffraction by an ideal (thin) absorber and reflection by an ideal (thin) multilayer with a limited reflectivity range (BW <= 15°) explains the peculiarities of the optimum phase of attenuated PSM for EUV. In contrast to phase shift masks for DUV with an optimum phase of 180°, the optimum phase of attenuated phase shift mask for EUV is in the range between 200° and 250°. The optimum value varies with the pitch and a chosen trade-off between large image contrast (normalized image log slope - NILS) and large threshold to size. The real 3D absorber and multilayer contribute to the specific value of the best absorber thickness and phase as well, This finding explains previous observations of this phenomenon. Waveguide effects in real absorbers with low refractive index n are at the basis of the good imaging performance of low n materials. Low n absorber materials exhibit significant sensitivity to illumination direction and feature size. The described double diffraction of light by the absorber introduces characteristic jumps in the optimum bias (and other imaging metrics) versus pitch. The optimized phase/thickness of low n (low k) absorbers can extend the performance of high NA EUV imaging to pitches below 10 nm.

Proceedings Article | 21 September 2021 Presentation + Paper

Simulation study on EUV multilayer polarization effects

L. Bilalaj, H. Mesilhy, A. Erdmann

Proceedings Volume 11875, 118750L (2021) https://doi.org/10.1117/12.2599904

KEYWORDS: Reflectivity, Polarization, Extreme ultraviolet, Polarizers, Nanoimprint lithography, Molybdenum, Silicon, Refractive index, Projection systems, Photomasks

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Proceedings Article | 12 September 2021 Presentation

Welcome and Introduction to Conference 11875

Daniel Smith, Frank Wyrowski, Andreas Erdmann

Proceedings Volume 11875, 1187503 (2021) https://doi.org/10.1117/12.2613784

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Proceedings Article | 12 September 2021 Presentation

Accurate prediction of EUV lithographic images using data-efficient generative networks

Abdalaziz Awad, Philipp Brendel, Dereje Woldeamanual, Andreas Rosskopf, Andreas Erdmann

Proceedings Volume 11875, 118750I (2021) https://doi.org/10.1117/12.2597309

KEYWORDS: 3D modeling, Photomasks, Data modeling, Extreme ultraviolet, Lithography, 3D image processing, Extreme ultraviolet lithography, Image processing, Computer simulations, Machine learning

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SPIE Journal Paper | 20 May 2021 Open Access

Investigation of waveguide modes in EUV mask absorbers

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

JM3, Vol. 20, Issue 02, 021004, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021004

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Diffraction, Wave propagation, Near field, Nanoimprint lithography, Extreme ultraviolet lithography

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SPIE Journal Paper | 3 May 2021

Study of novel EUVL mask absorber candidates

Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem M. Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen

JM3, Vol. 20, Issue 02, 021002, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021002

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Nanoimprint lithography, Etching, Ruthenium, Refractive index, Optical lithography, Semiconducting wafers, Thin films

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Novel mask absorber designs are catching the attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such an optimization. We propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, Ru–Ta, and Pt–Mo alloys. The choice of these materials is based on their theoretical performance evaluated by EUV imaging simulation based on their complex refractive index N ( λ ) = n ( λ ) + ik ( λ ) , where the optical constants n and k relate to the phase velocity and the absorption of electromagnetic radiation with a wavelength λ, respectively. The materials are deposited as thin films on Si substrate with an additional Ru layer to mimic the cap of the multilayer mirror on the real mask. The experimental n and k values are determined by analyzing EUV reflectivity data obtained using a 13.5-nm synchrotron EUV radiation. The imaging simulation presented consists of calculating several imaging metrics including non-telecentricity, normalized image log-slope, and threshold-to-size for specific use cases using the novel absorber. It also compares the proposed materials with the reference TaBN absorber. TaTeN shows higher absorption than TaBN and refraction closer to 1, which improves phase matching for a high k absorber. The refractive index of Ru–Ta and Pt–Mo alloys exhibits a large difference from that of air and provides the required phase shift of attenuated phase shift masks. The characterizations of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime, and etchability for mask patterning. The stability is first tested against several standard mask cleaning solutions by a beaker test for up to 24 h. The samples are also exposed to hydrogen plasma to imitate the working environment in an EUV scanner. Concerning material patterning, chemical reactive ion etch is applied for preliminary tests. A proper etch recipe is found for TaTeN with a good etch rate (about 60 nm / min) and good selectivity to the Ru underlayer (Ru etch is negligible).

SPIE Journal Paper | 4 March 2021 Open Access

Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

Zelalem Belete, Peter De Bisschop, Ulrich Welling, Andreas Erdmann

JM3, Vol. 20, Issue 01, 014801, (March 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.014801

KEYWORDS: Photoresist materials, Photoresist developing, Calibration, Line width roughness, Stochastic processes, Data modeling, Photons, Algorithm development, Molecules, Extreme ultraviolet lithography

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SPIE Press Book | 3 March 2021

Optical and EUV Lithography: A Modeling Perspective

Andreas Erdmann

KEYWORDS: Photomasks, Lithography, Photoresist materials, Diffraction, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Optical lithography, Projection systems, Photoresist developing

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Optical and EUV Lithography: A Modeling Perspective

Proceedings Article | 22 February 2021 Presentation

Investigation of waveguide modes in EUV mask absorbers

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

Proceedings Volume 11609, 116090E (2021) https://doi.org/10.1117/12.2587948

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Near field, Nanoimprint lithography, SRAF, Coherence imaging, Binary data

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SPIE Journal Paper | 17 February 2021 Open Access

Modeling the impact of shrinkage effects on photoresist development

Sean D'Silva, Thomas Mülders, Hans-Jürgen Stock, Andreas Erdmann

JM3, Vol. 20, Issue 01, 014602, (February 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.014602

KEYWORDS: Photoresist developing, Photoresist materials, Polymers, Finite element methods, Thermal modeling, Optical proximity correction, Cadmium sulfide, Lithography, Standards development, Critical dimension metrology

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Proceedings Article | 18 December 2020 Presentation + Paper

Multilayer optimization for high-NA EUV mask3D suppression

Eelco van Setten, Katrina Rook, Hazem Mesilhy, Gerardo Bottiglieri, Frank Timmermans, Meng Lee, Andreas Erdmann, Tim Brunner

Proceedings Volume 11517, 115170Y (2020) https://doi.org/10.1117/12.2574450

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Reflectivity, EUV optics, Ion beams, Manufacturing

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Proceedings Article | 20 October 2020 Presentation + Paper

Mask absorber for next generation EUV lithography

Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen

Proceedings Volume 11517, 1151706 (2020) https://doi.org/10.1117/12.2572114

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Ruthenium, X-rays, Refractive index, Reflectivity, Phase shifts, Mask cleaning

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Novel mask absorber designs are calling attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such optimization [1]. In this paper we propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, Ru-Ta and Pt-Mo alloys. The choice of these materials is based on their theoretical performance evaluated by EUV imaging simulation based on their complex refractive index N(λ) = n(λ) +ik(λ), where the optical constants n and k relate to the phase velocity and to the absorption of an electromagnetic radiation with a wavelength λ, respectively. The materials are deposited as thin films on Si substrate with an additional Ru layer to mimic the cap of multilayer mirror (MLM) on the real mask. The experimental n and k values are determined by analyzing EUV reflectivity data obtained using a 13.5 nm synchrotron EUV radiation. The imaging simulation presented in this paper consists of calculation of several imaging metrics like non-telecentricity, normalized image log-slop (NILS), and threshold-to-size for specific use cases using the novel absorber. It also compares the proposed materials to the reference TaBN absorber. TaTeN shows higher absorption than TaBN and refraction closer to 1, which improves phase matching for a high k absorber. The refractive index of Ru-Ta and Pt-Mo alloys exhibits a large difference to that of air and provides the required phased shift of attenuated phase shift masks [2]. The characterizations of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime and etchablity for mask patterning. The stability is first tested against several standard mask cleaning solutions by beaker test up to 24 hours with the film structure monitored by X-ray reflectivity analysis. The samples are also exposed to hydrogen plasma to imitate the working environment in a EUV scanner. Material integrity is checked with Rutherford backscattering spectroscopy before and after the exposure. Concerning material patterning, chemical reactive ion etch is applied for preliminary tests. A proper etch recipe is found for TaTeN with good etch rate (about 60 nm/min) and good selectivity to Ru underlayer (Ru etch is ignorable).

SPIE Journal Paper | 1 October 2020 Open Access

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

JM3, Vol. 19, Issue 04, 041001, (October 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.4.041001

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Proceedings Article | 24 March 2020 Presentation

Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

Proceedings Volume 11323, 1132309 (2020) https://doi.org/10.1117/12.2550882

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Imaging systems, Extreme ultraviolet, Refractive index, Nanoimprint lithography, Reflectivity, Tantalum, Lithographic illumination

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Proceedings Article | 23 March 2020 Presentation + Paper

Pathfinding the perfect EUV mask: the role of the multilayer

H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. van Setten, T. Fliervoet, A. Erdmann

Proceedings Volume 11323, 1132316 (2020) https://doi.org/10.1117/12.2551870

KEYWORDS: Reflectivity, Multilayers, Photomasks, Extreme ultraviolet, Silicon, Molybdenum, Diffraction, Optimization (mathematics), Lithography, Optical lithography

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Proceedings Article | 9 October 2019 Presentation + Paper

Particle on EUV pellicles, impact on LWR

Michiel Kupers, Gijsbert Rispens, Lokesh Devaraj, Gerardo Bottiglieri, Twan van den Hoogenhoff, Par Broman, Andreas Erdmann, Felix Wahlisch

Proceedings Volume 11147, 111470S (2019) https://doi.org/10.1117/12.2537103

KEYWORDS: Particles, Line width roughness, Pellicles, Semiconducting wafers, Extreme ultraviolet, Reticles, Scanners, Extreme ultraviolet lithography, Photomasks

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Proceedings Article | 29 August 2019 Paper

Lithographic effects due to particles on high-NA EUV mask pellicle

Lokesh Devaraj, Gerardo Bottiglieri, Andreas Erdmann, Felix Wählisch, Michiel Kupers, Eelco van Setten, Timon Fliervoet

Proceedings Volume 11177, 111770V (2019) https://doi.org/10.1117/12.2534177

KEYWORDS: Particles, Pellicles, Photomasks, Phase shifts, Extreme ultraviolet, Scanners, Nanoimprint lithography, Extreme ultraviolet lithography, Reticles

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Proceedings Article | 27 June 2019 Paper

Mask absorber development to enable next-generation EUVL

Vicky Philipsen, Kim Vu Luong, Karl Opsomer, Laurent Souriau, Jens Rip, Christophe Detavernier, Andreas Erdmann, Peter Evanschitzky, Christian Laubis, Philipp Hönicke, Victor Soltwisch, Eric Hendrickx

Proceedings Volume 11178, 111780F (2019) https://doi.org/10.1117/12.2537967

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Metals, Plasma etching, Etching, Optical properties

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Proceedings Article | 26 March 2019 Presentation + Paper

3D mask effects in high NA EUV imaging

Andreas Erdmann, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10957, 109570Z (2019) https://doi.org/10.1117/12.2515678

KEYWORDS: Diffraction, Photomasks, Extreme ultraviolet, 3D modeling, 3D image processing, Lithography, Projection systems

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Proceedings Article | 10 October 2018 Presentation + Paper

Novel EUV mask absorber evaluation in support of next-generation EUV imaging

Vicky Philipsen, Kim Vu Luong, Karl Opsomer, Christophe Detavernier, Eric Hendrickx, Andreas Erdmann, Peter Evanschitzky, Robbert W. van de Kruijs, Zahra Heidarnia-Fathabad, Frank Scholze, Christian Laubis

Proceedings Volume 10810, 108100C (2018) https://doi.org/10.1117/12.2501799

KEYWORDS: Material characterization, Photomasks, Extreme ultraviolet, Metals, Tellurium, Extreme ultraviolet lithography, Refractive index

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In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation-dependent effects on wafer level will consume a significant part of the lithography budget using the current Ta-based mask. Mask absorber optimization can mitigate these so-called mask 3D effects. Thin metal absorbers like Ni and Co have been experimentally investigated due to their high EUV absorption, but they pose challenges on the current technology of subtractive mask patterning [1]. A simulation study of attenuated EUV phase shift masks has identified through multiobjective optimization superior imaging solutions for specific use cases and illumination conditions [2]. Evaluating novel EUV mask absorbers evolves on two levels, demonstrating (1) improvements from lithographic perspective and (2) compatibility with the full mask supply chain including material deposition, absorber patterning, scanner environment compatibility and mask lifetime. On the lithographic level, we have identified regions based on the material optical properties and their gain in imaging performance compared to the reference Ta-based absorber. Within each improvement region we engineered mask absorber materials to achieve both the required imaging capabilities, as well as the technical requirements for an EUV mask absorber. We discuss the material development of Te-based alloys and Ag-based layered structures, because of their high EUV extinction. For the attenuated phase shift materials, we start from a Ru-base material, due to its low refractive index, and construct Ru-alloys. On the experimental level, we examined our novel mask absorber materials against an initial mask absorber requirement list using an experimental test flow. Candidate materials are evaluated on film morphology and stability through thermal, hydrogen, EUV loading, and chemical cleaning, for their EUV optical constants by EUV reflectometry, as well as preliminary for selective dry etch. The careful mask absorber evaluation, combining imaging simulations and experimental material tests, allowed us to narrow down to promising combinations for novel EUV mask absorbers.

Proceedings Article | 19 September 2018 Paper

Accurate determination of 3D PSF and resist effects in grayscale laser lithography

Temitope Onanuga, Corinna Kaspar, Holger Sailer, Andreas Erdmann

Proceedings Volume 10775, 107750I (2018) https://doi.org/10.1117/12.2326007

KEYWORDS: 3D modeling, Point spread functions, Photoresist processing, 3D image processing, Calibration, Grayscale lithography, Scanning electron microscopy, Gaussian beams, Lithography, 3D metrology

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SPIE Journal Paper | 11 August 2018 Open Access

Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

JM3, Vol. 18, Issue 01, 011005, (August 2018) https://doi.org/10.1117/12.10.1117/1.JMM.18.1.011005

KEYWORDS: Photomasks, Nanoimprint lithography, Extreme ultraviolet, Phase shifts, Refractive index, Nickel, Ruthenium, Lithography, Reflectivity, Binary data

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Proceedings Article | 29 May 2018 Paper

Simulation study of illumination effects in high-NA EUV lithography

Mohamed Ismail, Peter Evanschitzky, Andreas Erdmann, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10694, 106940H (2018) https://doi.org/10.1117/12.2315091

KEYWORDS: Photomasks, Nanoimprint lithography, Diffraction, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Lithographic illumination, Imaging systems, Reflectivity, Critical dimension metrology

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Current EUV exposure systems employ a numerical aperture (NA) of 0.33. This relatively small NA is a consequence of geometrical design limitations of all reflective projection systems with a 4 demagnification in the orthogonal x- and y-directions of the image plane. Anamorphic imaging, which employs different demagnification in horizontal (y) and vertical (x) direction can increase the NA to a value of 0.55. The consequences of using anamorphic high-NA imaging system have to be studied by rigorous methods. Since the range of illumination angles of the anamorphic system is different in x and y directions, one way to understand the involved phenomena, is to investigate and compare the impact of illumination angles for both the high-NA 4 8 anamorphic system at 0.55NA and the lower-NA 4 4 system at 0.33NA. We employ fully coherent that is single source point illumination and imaging to study the impact of the illumination direction on the most relevant lithographic metrics. These metrics include the resulting feature size or critical dimension (CD), the feature position, a local contrast or the normalized image log slope (NILS) and the best-focus position of the projected images. In this study, aerial images from a uniformly-distributed grid of 230 illumination positions were computed and analyzed. The results of the simulation study confirmed that larger illumination angles cause more pronounced shadowing effects and significant variations of the position and feature size versus the illumination direction. The larger demagnification direction of the anamorphic system involves a smaller object-side angular spread of the illumination direction, resulting in less pronounced variation of CD and position versus the illumination direction compared to the isomorphic system. Both systems exhibit a drop of the NILS for more oblique angles. However, the larger image side angles of the high-NA system result in more pronounced polarization effects, which reduce the NILS values compared to that of the lower NA system. The high NA achieved by anamorphic imaging increases the importance of 3D mask effects in EUV lithography. It is not a priori known, which of these 3D mask effects can be attributed to the absorber or the multilayer part of the mask. A hybrid mask simulation approach addresses this question. In the second part of this study, simulations using an hybrid of real and ideal mask elements were performed in an attempt to understand their individual effects of the mask elements and which mask element contributes to which of the observed effects.

Proceedings Article | 28 May 2018 Paper

Fourier ptychography for lithography high NA systems

Atoosa Dejkameh, Andreas Erdmann, Peter Evanschitzky, Yasin Ekinci

Proceedings Volume 10694, 106940B (2018) https://doi.org/10.1117/12.2311332

KEYWORDS: Photomasks, Staring arrays, Nanoimprint lithography, Diffraction, Lithography, Phase shifts, Image resolution, Binary data, Imaging systems, Image quality

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Proceedings Article | 28 May 2018 Paper

Application of deep learning algorithms for Lithographic mask characterization

Dereje S. Woldeamanual, Andreas Erdmann, Andreas Maier

Proceedings Volume 10694, 1069408 (2018) https://doi.org/10.1117/12.2312478

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Network architectures, Image classification, Defect detection, Extreme ultraviolet lithography, Convolution, Reflectivity, Image processing

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The appearance of defects on the photomask is a key challenge in lithographic printing. Printable defects affect the lithographic process by causing errors in both the phase and magnitude of the light and of the sizes and location of the printed features. Presently 193 nm optical inspection tools are still the main ones for detecting pattern defects on EUV masks.1 However, pattern sizes on EUV masks could not be detected due to the resolution limit of 193 nm inspection tools. We propose and investigate the application of Convolutional Neural Networks (CNNs) to characterize and classify defects on lithographic masks. This paper details the training and evaluation of the CNNs to classify defects in simulated aerial images of an EUV setting. The simulation software Dr.LiTHO is used to simulate aerial images of defect-free masks and of masks with different types and locations of defects. Specifically we compute images of regular arrays of squares to be imaged with typical settings of EUV lithography (λ = 13.5 nm, NA= 0.33). We consider five types of absorber defects (extrusion, intrusion, oversize, undersize and center spot). The architecture of the CNN contains 4 convolutional layers (conv. layers) with a mixed size of filter,(3x3) and (5x5). The convolution stride and the spatial padding is 1 pixel for all conv. layers. Spatial pooling is carried out by 4 max-pooling layers. Two separate networks are trained for detection of the defect types and location, whereas a third algorithm combines the results. When an image is presented to the implemented algorithm and trained networks, it will return the defect type with its location. An accuracy of 99.9% on the training set and 99.3% on the test set is achieved for detection of the defect type. The network trained for location detection results in 98.7% training accuracy and 98.0% for the test set. Having a sufficient amount of training images the trained CNNs classify the types of defects and their location in the aerial image with high accuracy. The proposed method can be also applied to other defect types and simulation settings.

Proceedings Article | 20 March 2018 Paper

Modeling of block copolymer dry etching for directed self-assembly lithography

Zelalem Belete, Eberhard Baer, Andreas Erdmann

Proceedings Volume 10589, 105890U (2018) https://doi.org/10.1117/12.2299977

KEYWORDS: Polymethylmethacrylate, Polymers, Plasma etching, Directed self assembly

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Proceedings Article | 19 March 2018 Presentation + Paper

Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

Proceedings Volume 10583, 1058312 (2018) https://doi.org/10.1117/12.2299648

KEYWORDS: Photomasks, Refractive index, Nickel, Ruthenium, Phase shifts, Extreme ultraviolet, Lithography, Reflectivity, Thin films

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Proceedings Article | 16 October 2017 Paper

Efficient simulation of EUV pellicles

P. Evanschitzky, A. Erdmann

Proceedings Volume 10450, 104500B (2017) https://doi.org/10.1117/12.2280535

KEYWORDS: Pellicles, Particles, Photomasks, Lithography, Diffraction, Computer simulations, Extreme ultraviolet, Light, Critical dimension metrology, Projection systems

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SPIE Journal Paper | 20 September 2017

Simulation flow and model verification for laser direct-write lithography

Temitope Onanuga, Maximilian Rumler, Andreas Erdmann

JM3, Vol. 16, Issue 03, 033511, (September 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033511

KEYWORDS: Polymerization, Polymers, Optical simulations, Photoresist materials, 3D modeling, Direct write lithography, Nanoimprint lithography, Lithography, Calibration, Computer simulations

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SPIE Journal Paper | 19 August 2017

Advanced EUV mask and imaging modeling

Peter Evanschitzky, Andreas Erdmann

JM3, Vol. 16, Issue 04, 041005, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041005

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet, Computer simulations, Pellicles, Particles, Systems modeling, Waveguides, Imaging systems, 3D modeling

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SPIE Journal Paper | 1 August 2017

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter, Eric Hendrickx

JM3, Vol. 16, Issue 04, 041002, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041002

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Proceedings Article | 24 March 2017 Presentation + Paper

A physical model for innovative laser direct write lithography

Temitope Onanuga, Maximilian Rumler, Andreas Erdmann

Proceedings Volume 10147, 101470T (2017) https://doi.org/10.1117/12.2261093

KEYWORDS: Stimulated emission depletion microscopy, Polymerization, Lithography, 3D modeling, Absorption, Algorithm development, Direct write lithography, Optical lithography, Single photon, Laser optics, Two photon polymerization, Polymers, Photoresist materials, Optical simulations, Diffusion, Calibration

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Proceedings Article | 24 March 2017 Paper

Reducing EUV mask 3D effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Eric Hendrickx, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter

Proceedings Volume 10143, 1014310 (2017) https://doi.org/10.1117/12.2257929

KEYWORDS: Extreme ultraviolet, Photomasks, Metals, Nickel, Lithography, Extreme ultraviolet lithography, Optical properties, X-ray diffraction, Etching, Cobalt, Refractive index

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SPIE Journal Paper | 29 June 2016 Open Access

Special Section Guest Editorial:Extending VLSI and Alternative Technology with Optical and Complementary Lithography

Kafai Lai, Andreas Erdmann

JM3, Vol. 15, Issue 02, 021201, (June 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021201

KEYWORDS: Lithography, Optical lithography, 3D modeling, Very large scale integration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Optics manufacturing, Process control, Optical proximity correction

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Proceedings Article | 23 March 2016 Paper

An integrated source/mask/DSA optimization approach

Tim Fühner, Przemysław Michalak, Ulrich Welling, Juan Carlos Orozco-Rey, Marcus Müller, Andreas Erdmann

Proceedings Volume 9780, 97800M (2016) https://doi.org/10.1117/12.2222170

KEYWORDS: Directed self assembly, Interfaces, Photomasks, Optimization (mathematics), Lithography, Manufacturing, Bridges, Electroluminescence, Critical dimension metrology, Image segmentation

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Proceedings Article | 15 March 2016 Paper

Incorporating photomask shape uncertainty in computational lithography

Xiaofei Wu, Shiyuan Liu, Andreas Erdmann, Edmund Lam

Proceedings Volume 9780, 97800Q (2016) https://doi.org/10.1117/12.2220278

KEYWORDS: Photomasks, Electroluminescent displays, Critical dimension metrology, Lithography, Error analysis, Computational lithography, Source mask optimization, Optimization (mathematics), Electron beam lithography, Stochastic processes

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SPIE Journal Paper | 1 March 2016

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Graeupner

JM3, Vol. 15, Issue 02, 021205, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021205

KEYWORDS: Photomasks, Deep ultraviolet, Extreme ultraviolet, Diffraction, Extreme ultraviolet lithography, Refractive index, Lithography, Polarization, Chromium, Monochromatic aberrations

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SPIE Journal Paper | 19 January 2016

Extreme ultraviolet multilayer defect analysis and geometry reconstruction

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

JM3, Vol. 15, Issue 01, 014002, (January 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014002

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Databases, Zernike polynomials, Diffraction, Atrial fibrillation, Defect detection, Fourier transforms, Optical filters

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Proceedings Article | 23 September 2015 Paper

Application of Principal Component Analysis to EUV multilayer defect printing

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9630, 96300Y (2015) https://doi.org/10.1117/12.2190784

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Neural networks, Databases, Printing, Zernike polynomials, Extreme ultraviolet lithography, Spherical lenses, EUV optics

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SPIE Journal Paper | 19 March 2015 Open Access

Special Section Guest Editorial: Continuation of Scaling with Optical and Complementary Lithography

Kafai Lai, Andreas Erdmann

JM3, Vol. 14, Issue 01, 011001, (March 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.1.011001

KEYWORDS: Optical lithography, Lithography, Integrated optics, Double patterning technology, EUV optics, Optics manufacturing, Process control, Photomasks, Source mask optimization, Device simulation

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Proceedings Article | 18 March 2015 Paper

Mask-induced best-focus-shifts in DUV and EUV lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Gräupner

Proceedings Volume 9426, 94260H (2015) https://doi.org/10.1117/12.2086346

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Refractive index, Extreme ultraviolet lithography, Polarization, Electroluminescent displays, Lithography, Optical proximity correction, Monochromatic aberrations

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Proceedings Article | 16 March 2015 Paper

Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9422, 942218 (2015) https://doi.org/10.1117/12.2085468

KEYWORDS: Extreme ultraviolet, Photomasks, Fourier transforms, Neural networks, Phase retrieval, Printing, Lithography, Phase measurement, Optical properties, EUV optics

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SPIE Journal Paper | 8 August 2014

Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography

Xiaolei Liu, Xiangzhao Wang, Sikun Li, Guanyong Yan, Andreas Erdmann

JM3, Vol. 13, Issue 03, 033007, (August 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.3.033007

KEYWORDS: Photomasks, Diffraction, Critical dimension metrology, Extreme ultraviolet lithography, Waveguides, Extreme ultraviolet, Calibration, Mathematical modeling, Reflectivity, Wave propagation

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Proceedings Article | 17 April 2014 Paper

Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography

Xiaolei Liu, Xiangzhao Wang, Sikun Li, Guanyong Yan, Andreas Erdmann

Proceedings Volume 9048, 90483E (2014) https://doi.org/10.1117/12.2046333

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet lithography, Critical dimension metrology, Extreme ultraviolet, Silicon, Mathematical modeling, Lithographic illumination, Laser sintering, Reflectivity

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Proceedings Article | 31 March 2014 Paper

Rigorous simulation and optimization of the lithography/directed self-assembly co-process

Tim Fühner, Ulrich Welling, Marcus Müller, Andreas Erdmann

Proceedings Volume 9052, 90521C (2014) https://doi.org/10.1117/12.2047381

KEYWORDS: Monte Carlo methods, Cadmium, Lithography, Critical dimension metrology, Polymers, Polymethylmethacrylate, Interfaces, Computer simulations, Molecular interactions, Directed self assembly

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Proceedings Article | 31 March 2014 Paper

In situ aberration measurement method using a phase-shift ring mask

Xiangzhao Wang, Sikun Li, Jishuo Yang, Feng Tang, Guanyong Yan, Andreas Erdmann

Proceedings Volume 9052, 90521J (2014) https://doi.org/10.1117/12.2046257

KEYWORDS: Photomasks, In situ metrology, Lithography, Principal component analysis, Process modeling, Image processing, Zernike polynomials, Lenses, Image retrieval, Monochromatic aberrations

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Proceedings Article | 31 March 2014 Paper

Lithographic process window optimization for mask aligner proximity lithography

Reinhard Voelkel, Uwe Vogler, Arianna Bramati, Andreas Erdmann, Nezih Ünal, Ulrich Hofmann, Marc Hennemeyer, Ralph Zoberbier, David Nguyen, Juergen Brugger

Proceedings Volume 9052, 90520G (2014) https://doi.org/10.1117/12.2046332

KEYWORDS: Lithography, Photomasks, Lithographic illumination, Critical dimension metrology, Photoresist materials, Tolerancing, Molybdenum, Diffraction, Silicon, Photoresist developing

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Proceedings Article | 31 March 2014 Paper

A defocus measurement method for an in situ aberration measurement method using a phase-shift ring mask

Sikun Li, Xiangzhao Wang, Jishuo Yang, Feng Tang, Guanyong Yan, Andreas Erdmann

Proceedings Volume 9052, 90521L (2014) https://doi.org/10.1117/12.2046649

KEYWORDS: Photomasks, Image processing, Process modeling, In situ metrology, Lithography, Principal component analysis, Image retrieval, Polarization, Error analysis, Databases

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SPIE Journal Paper | 2 December 2013

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

JM3, Vol. 13, Issue 01, 011002, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011002

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Data modeling, Optical lithography, Systems modeling, Lithography, Polarization, Neurons, Optical simulations

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SPIE Journal Paper | 11 June 2013

In situ aberration measurement technique based on an aerial image with an optimized source

Guanyong Yan, Xiangzhao Wang, Sikun Li, Jishuo Yang, Dongbo Xu, Lifeng Duan, Anatoly Bourov, Andreas Erdmann

OE, Vol. 52, Issue 06, 063602, (June 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.6.063602

KEYWORDS: In situ metrology, Image processing, Principal component analysis, Process modeling, Lithography, Matrices, Optical engineering, Image retrieval, Lithographic illumination, Zernike polynomials

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Proceedings Article | 22 May 2013 Paper

Defect parameters retrieval based on optical projection images

Dongbo Xu, Sikun Li, Xiangzhao Wang, Tim Fühner, Andreas Erdmann

Proceedings Volume 8789, 87890J (2013) https://doi.org/10.1117/12.2018210

KEYWORDS: Photomasks, 3D modeling, Defect detection, Lithography, Monochromatic aberrations, Projection systems, Integrated optics, Nanostructures, Lithographic illumination, Optics manufacturing

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SPIE Journal Paper | 7 May 2013

High-order aberration measurement technique based on a quadratic Zernike model with optimized source

Jishuo Yang, Xiangzhao Wang, Sikun Li, Lifeng Duan, Guanyong Yan, Dongbo Xu, Anatoly Bourov, Andreas Erdmann

OE, Vol. 52, Issue 05, 053603, (May 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.5.053603

KEYWORDS: Photomasks, Lithography, Artificial intelligence, Principal component analysis, Optical engineering, Process modeling, Wavefront aberrations, Monochromatic aberrations, Instrument modeling, Mechanics

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Proceedings Article | 12 April 2013 Paper

Source mask optimization using real-coded genetic algorithms

Chaoxing Yang, Xiangzhao Wang, Sikun Li, Andreas Erdmann

Proceedings Volume 8683, 86831T (2013) https://doi.org/10.1117/12.2010137

KEYWORDS: Source mask optimization, Photomasks, Genetic algorithms, Binary data, Logic, Lithographic illumination, Genetics, Optimization (mathematics), Computer programming, Inverse problems

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Proceedings Article | 12 April 2013 Paper

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 8683, 868317 (2013) https://doi.org/10.1117/12.2011132

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Systems modeling, Optical lithography, Lithography, Performance modeling, Imaging systems, Data modeling, Optical simulations

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Proceedings Article | 1 April 2013 Paper

Modeling strategies for EUV mask multilayer defect dispositioning and repair

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8679, 86790Y (2013) https://doi.org/10.1117/12.2011444

KEYWORDS: Photomasks, Printing, Extreme ultraviolet, Lithography, Multilayers, Atomic force microscopy, Semiconducting wafers, Optimization (mathematics), Critical dimension metrology, Systems modeling

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Proceedings Article | 1 April 2013 Paper

Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, 86791Q (2013) https://doi.org/10.1117/12.2011432

KEYWORDS: Photomasks, Image quality standards, Nanoimprint lithography, Lithography, Molybdenum, Binary data, Optical proximity correction, Extreme ultraviolet, Silicon, Multilayers

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SPIE Journal Paper | 1 March 2013

Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

JM3, Vol. 12, Issue 02, 021005, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021005

KEYWORDS: Extreme ultraviolet, Computer simulations, Waveguides, Photomasks, Diffraction, Multilayers, Data modeling, Matrices, Electromagnetism, Finite-difference time-domain method

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Proceedings Article | 18 December 2012 Paper

Imaging characteristics of binary and phase shift masks for EUV projection lithography

Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 8550, 85503K (2012) https://doi.org/10.1117/12.981444

KEYWORDS: Photomasks, Extreme ultraviolet, Phase shifts, Binary data, Extreme ultraviolet lithography, Projection lithography, Imaging systems, Electroluminescent displays, Projection systems, Image processing

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Proceedings Article | 18 December 2012 Paper

In situ aberration measurement technique based on quadratic Zernike model

Jishuo Yang, Xiangzhao Wang, Sikun Li, Lifeng Duan, Guanyong Yan, Dongbo Xu, Anatoly Bourov, Andreas Erdmann

Proceedings Volume 8550, 85503O (2012) https://doi.org/10.1117/12.981328

KEYWORDS: Lithography, Principal component analysis, Wavefront aberrations, In situ metrology, Semiconducting wafers, Image processing, Photomasks, Computer simulations, Metrology, Artificial intelligence

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Proceedings Article | 18 December 2012 Paper

In situ aberration measurement technique based on aerial image with optimized source

Guanyong Yan, Xiangzhao Wang, Sikun Li, Jishuo Yang, Dongbo Xu, Lifeng Duan, Anatoly Bourov, Andreas Erdmann

Proceedings Volume 8550, 85503N (2012) https://doi.org/10.1117/12.981334

KEYWORDS: Matrices, Lithographic illumination, Lithography, Image processing, Principal component analysis, Process modeling, Statistical analysis, Error analysis, Artificial intelligence, Imaging systems

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Proceedings Article | 8 November 2012 Paper

Efficient simulation of EUV multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 8522, 85221S (2012) https://doi.org/10.1117/12.964282

KEYWORDS: Extreme ultraviolet, Waveguides, Computer simulations, Ions, Diffraction, Neodymium, Photomasks, Cadmium sulfide, Polonium, Data storage

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Proceedings Article | 23 March 2012 Paper

Analysis of EUV mask multilayer defect printing characteristics

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8322, 83220E (2012) https://doi.org/10.1117/12.916411

KEYWORDS: Photomasks, Printing, Extreme ultraviolet, Multilayers, Semiconducting wafers, Computer simulations, Critical dimension metrology, Extreme ultraviolet lithography, Reflectivity, Lithography

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Proceedings Article | 13 March 2012 Paper

Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner

Proceedings Volume 8326, 832609 (2012) https://doi.org/10.1117/12.916344

KEYWORDS: Photomasks, Diffraction, Optical filters, 3D modeling, Polarization, Calibration, Solids, Projection systems, Immersion lithography, Lithography

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Proceedings Article | 13 March 2012 Paper

Mutual source, mask and projector pupil optimization

Tim Fühner, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 8326, 83260I (2012) https://doi.org/10.1117/12.916529

KEYWORDS: Electroluminescence, Projection systems, Optical lithography, Current controlled current source, SRAF, Wavefronts, Monochromatic aberrations, Genetic algorithms, Optimization (mathematics)

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Proceedings Article | 13 March 2012 Paper

Advanced mask aligner lithography (AMALITH)

Reinhard Voelkel, Uwe Vogler, Arianna Bramati, Tina Weichelt, Lorenz Stuerzebecher, Uwe Zeitner, Kristian Motzek, Andreas Erdmann, Michael Hornung, Ralph Zoberbier

Proceedings Volume 8326, 83261Y (2012) https://doi.org/10.1117/12.916509

KEYWORDS: Photomasks, Lithography, Lithographic illumination, Optical proximity correction, Molybdenum, Semiconducting wafers, Photoresist materials, Resolution enhancement technologies, Printing, Integrated optics

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SPIE Journal Paper | 23 February 2012

Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Oliver Rudolph, Peter Evanschitzky, Andreas Erdmann, Eberhard Bär, Jürgen Lorenz

JM3, Vol. 11, Issue 1, 013004, (February 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.013004

KEYWORDS: Photomasks, Line width roughness, Spatial frequencies, Electromagnetism, Critical dimension metrology, Near field, Line edge roughness, Waveguides, Lithography, Artificial intelligence

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Proceedings Article | 14 October 2011 Paper

Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Oliver Rudolph, Peter Evanschitzky, Andreas Erdmann, Eberhard Bär, Jürgen Lorenz

Proceedings Volume 8166, 81663Z (2011) https://doi.org/10.1117/12.898522

KEYWORDS: Line width roughness, Spatial frequencies, Photomasks, Line edge roughness, Critical dimension metrology, Near field, Waveguides, Artificial intelligence, Lithography, Image analysis

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Proceedings Article | 5 October 2011 Paper

Analytical model for EUV mask diffraction field calculation

Yuting Cao, Xiangzhao Wang, Andreas Erdmann, Peng Bu, Yang Bu

Proceedings Volume 8171, 81710N (2011) https://doi.org/10.1117/12.896579

KEYWORDS: Photomasks, Diffraction, Mirrors, Extreme ultraviolet, Reflectivity, Systems modeling, Extreme ultraviolet lithography, Error analysis, Scattering, Calibration

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Proceedings Article | 5 October 2011 Paper

Numerical optimization of illumination and mask layout for the enlargement of process windows and for the control of photoresist profiles in proximity printing

Kristian Motzek, Stefan Partel, Uwe Vogler, Andreas Erdmann

Proceedings Volume 8171, 81710K (2011) https://doi.org/10.1117/12.896755

KEYWORDS: Photomasks, Printing, Photoresist materials, Semiconducting wafers, Collimation, Source mask optimization, Photoresist developing, Optimization (mathematics), Optical proximity correction, Diffraction

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Proceedings Article | 5 October 2011 Paper

Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, Thorsten Hofmann

Proceedings Volume 8171, 81710M (2011) https://doi.org/10.1117/12.896813

KEYWORDS: Calibration, Photomasks, Data modeling, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Diffusion, Semiconducting wafers, Projection systems

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Proceedings Article | 5 October 2011 Paper

Influence of geometry variations and defects on the near-field optical properties of pulsed compression gratings

Jianpeng Wang, Andreas Erdmann, Shijie Liu, Jianda Shao, Yunxia Jin, Hongbo He, Kui Yi

Proceedings Volume 8171, 81710O (2011) https://doi.org/10.1117/12.897335

KEYWORDS: Diffraction gratings, Near field, Dielectrics, Diffraction, Optical properties, Laser induced damage, 3D modeling, Near field optics, Multilayers, Laser damage threshold

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Proceedings Article | 23 May 2011 Paper

Image simulation of projection systems in photolithography

P. Evanschitzky, T. Fühner, A. Erdmann

Proceedings Volume 8083, 80830E (2011) https://doi.org/10.1117/12.895029

KEYWORDS: Photomasks, Lithography, Diffraction, Projection systems, Computer simulations, Photoresist materials, Imaging systems, Polarization, Semiconducting wafers, Extreme ultraviolet

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Proceedings Article | 23 March 2011 Paper

Compensation of mask induced aberrations by projector wavefront control

Peter Evanschitzky, Feng Shao, Tim Fühner, Andreas Erdmann

Proceedings Volume 7973, 797329 (2011) https://doi.org/10.1117/12.879207

KEYWORDS: Projection systems, Photomasks, Monochromatic aberrations, Wavefronts, Diffraction, Imaging systems, Extreme ultraviolet, Lithography, Semiconducting wafers, EUV optics

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Proceedings Article | 23 March 2011 Paper

Accuracy and performance of 3D mask models in optical projection lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner, Feng Shao, Steffen Limmer, Dietmar Fey

Proceedings Volume 7973, 79730O (2011) https://doi.org/10.1117/12.879053

KEYWORDS: Photomasks, 3D modeling, Diffraction, Polarization, Systems modeling, Performance modeling, Lithography, Lithographic illumination, Projection lithography, Projection systems

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Proceedings Article | 26 May 2010 Paper

Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models

Feng Shao, Peter Evanschitzky, Kristian Motzek, Andreas Erdmann

Proceedings Volume 7748, 774806 (2010) https://doi.org/10.1117/12.866470

KEYWORDS: Waveguides, Photomasks, Critical dimension metrology, Extreme ultraviolet, Computer simulations, Refractive index, Calibration, Printing, Finite-difference time-domain method, Diffraction

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Proceedings Article | 15 May 2010 Paper

Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes

Z. Rahimi, A. Erdmann, P. Evanschitzky, C. Pflaum

Proceedings Volume 7545, 75450C (2010) https://doi.org/10.1117/12.863595

KEYWORDS: Photomasks, Diffraction, Computer simulations, Finite-difference time-domain method, Lithography, Near field, Interfaces, Critical dimension metrology, Maxwell's equations, Semiconducting wafers

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Proceedings Article | 5 May 2010 Paper

Characterization of the scattering effect of complex mask geometries with surface roughness

Z. Rahimi, A. Erdmann, C. Pflaum

Proceedings Volume 7717, 771709 (2010) https://doi.org/10.1117/12.853726

KEYWORDS: Photomasks, Diffraction, Surface roughness, Near field, Computer simulations, Finite-difference time-domain method, Critical dimension metrology, Etching, Maxwell's equations, Light scattering

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Proceedings Article | 11 March 2010 Paper

Modeling of exploration of reversible contrast enhancement layers for double exposure lithography

Feng Shao, Gregory Cooper, Zhiyun Chen, Andreas Erdmann

Proceedings Volume 7640, 76400J (2010) https://doi.org/10.1117/12.846525

KEYWORDS: Photoresist materials, Lithography, Refractive index, Diffraction, Modulation, Nanoimprint lithography, Absorption, Nanocrystals, Nonlinear optics, Computer simulations

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Proceedings Article | 10 March 2010 Paper

Topography-aware BARC optimization for double patterning

Shijie Liu, Tim Fühner, Feng Shao, Aliaksandr Barenbaum, Johannes Jahn, Andreas Erdmann

Proceedings Volume 7640, 76403C (2010) https://doi.org/10.1117/12.846441

KEYWORDS: Modulation, Reflectivity, Refractive index, Double patterning technology, Lithography, Optimization (mathematics), Manufacturing, Optical properties, Genetic algorithms, Critical dimension metrology

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Proceedings Article | 4 March 2010 Paper

Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes

Andreas Erdmann, Feng Shao, Juergen Fuhrmann, Andre Fiebach, George Patsis, Peter Trefonas

Proceedings Volume 7640, 76400B (2010) https://doi.org/10.1117/12.845849

KEYWORDS: Lithography, Diffusion, Photoresist processing, Double patterning technology, Semiconducting wafers, Algorithm development, Refractive index, Photoresist materials, Computer simulations, Image processing

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SPIE Journal Paper | 1 January 2010

Mask diffraction analysis and optimization for extreme ultraviolet masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

JM3, Vol. 9, Issue 01, 013005, (January 2010) https://doi.org/10.1117/12.10.1117/1.3302124

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet, Refractive index, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

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SPIE Journal Paper | 1 October 2009

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

JM3, Vol. 8, Issue 04, 043070, (October 2009) https://doi.org/10.1117/12.10.1117/1.3275723

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Waveguides, Lithography, Refractive index, Computer simulations, Optical proximity correction, Reflectivity, Photoresist materials

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Proceedings Article | 30 September 2009 Paper

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7488, 74882C (2009) https://doi.org/10.1117/12.833464

KEYWORDS: Photomasks, Diffraction, Waveguides, Extreme ultraviolet, Optical proximity correction, Extreme ultraviolet lithography, Lithographic illumination, Lithography, 3D image processing, Stereoscopy

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Proceedings Article | 17 June 2009 Paper

Lithography simulation: modeling techniques and selected applications

Andreas Erdmann, Tim Fühner, Feng Shao, Peter Evanschitzky

Proceedings Volume 7390, 739002 (2009) https://doi.org/10.1117/12.829409

KEYWORDS: Lithography, Photomasks, Photoresist materials, Diffraction, Semiconducting wafers, Computer simulations, Double patterning technology, Photoresist developing, Optimization (mathematics), Absorption

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Proceedings Article | 27 May 2009 Paper

Extended Abbe approach for fast and accurate lithography imaging simulations

P. Evanschitzky, A. Erdmann, T. Fühner

Proceedings Volume 7470, 747007 (2009) https://doi.org/10.1117/12.835168

KEYWORDS: Photomasks, Computer simulations, Diffraction, Imaging systems, Lithography, Semiconducting wafers, Polarization, Performance modeling, Systems modeling, Superposition

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Proceedings Article | 18 March 2009 Paper

Mask diffraction analysis and optimization for EUV masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

Proceedings Volume 7271, 72711E (2009) https://doi.org/10.1117/12.814119

KEYWORDS: Photomasks, Diffraction, Refractive index, Extreme ultraviolet, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

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Proceedings Article | 16 March 2009 Paper

Exploration of linear and non-linear double exposure techniques by simulation

John Petersen, Robert Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 7274, 72741V (2009) https://doi.org/10.1117/12.814411

KEYWORDS: Remote sensing, Double patterning technology, Optical lithography, Current controlled current source, Superposition, Lithography

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Proceedings Article | 16 March 2009 Paper

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7274, 72740O (2009) https://doi.org/10.1117/12.814176

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Lithography, Waveguides, Refractive index, Double patterning technology, Optical proximity correction, Reflectivity, Photoresist materials

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Proceedings Article | 17 October 2008 Paper

Benchmark of rigorous methods for electromagnetic field simulations

Sven Burger, Lin Zschiedrich, Frank Schmidt, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 7122, 71221S (2008) https://doi.org/10.1117/12.801248

KEYWORDS: Finite element methods, Photomasks, Near field, Waveguides, Computer simulations, Lithography, Electromagnetism, Diffraction, Cadmium, Interfaces

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Proceedings Article | 17 October 2008 Paper

Simulation-based EUV source and mask optimization

Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 7122, 71221Y (2008) https://doi.org/10.1117/12.801436

KEYWORDS: Photomasks, Refractive index, Optimization (mathematics), Reflectivity, Chromium, Extreme ultraviolet, Source mask optimization, Extreme ultraviolet lithography, Lithographic illumination, Genetic algorithms

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Proceedings Article | 19 May 2008 Paper

Increasing the predictability of AIMS measurements by coupling to resist simulations

Balint Meliorisz, Andreas Erdmann, Thomas Schnattinger, Ulrich Ströβner, Thomas Scherübl, Peter De Bisschop, Vicky Philipsen

Proceedings Volume 7028, 70282S (2008) https://doi.org/10.1117/12.793098

KEYWORDS: Semiconducting wafers, Photoresist materials, Data modeling, Photomasks, Scanners, Diffusion, Lithography, Photoresist processing, Calibration, Photoresist developing

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Proceedings Article | 19 May 2008 Paper

Optimization of mask absorber stacks and illumination settings for contact hole imaging

Andreas Erdmann, Tim Fühner, Peter Evanschitzky

Proceedings Volume 7028, 70283L (2008) https://doi.org/10.1117/12.793128

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Optimization (mathematics), Polarization, Phase shifts, Binary data, Algorithm development, Computer simulations, Inspection

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Proceedings Article | 2 May 2008 Paper

Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique

Feng Shao, Peter Evanschitzky, David Reibold, Andreas Erdmann

Proceedings Volume 6792, 679206 (2008) https://doi.org/10.1117/12.798519

KEYWORDS: Photomasks, Waveguides, Computer simulations, Extreme ultraviolet, Diffraction, Near field optics, EUV optics, Near field, Electromagnetism, Optical simulations

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Proceedings Article | 1 April 2008 Paper

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios

Andreas Erdmann, Peter Evanschitzky, Tim Fühner, Thomas Schnattinger, Cheng-Bai Xu, Chuck Szmanda

Proceedings Volume 6924, 692452 (2008) https://doi.org/10.1117/12.772741

KEYWORDS: Semiconducting wafers, Lithography, Refractive index, Double patterning technology, Photomasks, Computer simulations, Optical properties, Photoresist processing, Nonlinear optics, Superposition

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Proceedings Article | 1 April 2008 Paper

A simulation study on the impact of lithographic process variations on CMOS device performance

Tim Fühner, Christian Kampen, Ina Kodrasi, Alexander Burenkov, Andreas Erdmann

Proceedings Volume 6924, 692453 (2008) https://doi.org/10.1117/12.772768

KEYWORDS: Lithography, Device simulation, Critical dimension metrology, CMOS devices, Photomasks, TCAD, Instrument modeling, Computer simulations, Transistors, Silicon

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Proceedings Article | 26 March 2008 Paper

A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography

Thomas Schnattinger, Andreas Erdmann

Proceedings Volume 6923, 69230R (2008) https://doi.org/10.1117/12.772507

KEYWORDS: Line edge roughness, Polymers, Diffusion, Molecules, Materials processing, Photoresist processing, Stochastic processes, Monte Carlo methods, Image quality, Projection systems

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Proceedings Article | 30 October 2007 Paper

Impact of alternative mask stacks on the imaging performance at NA 1.20 and above

Vicky Philipsen, Kei Mesuda, Peter De Bisschop, Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301N (2007) https://doi.org/10.1117/12.746678

KEYWORDS: Photomasks, Chromium, Electroluminescence, Semiconducting wafers, Nanoimprint lithography, Tantalum, Lithography, Scanners, Scanning electron microscopy, Resolution enhancement technologies

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Proceedings Article | 30 October 2007 Paper

Simulation of larger mask areas using the waveguide method with fast decomposition technique

Peter Evanschitzky, Feng Shao, Andreas Erdmann, David Reibold

Proceedings Volume 6730, 67301P (2007) https://doi.org/10.1117/12.746631

KEYWORDS: Computer simulations, 3D image processing, Waveguides, Extreme ultraviolet, Near field, Photomasks, 3D modeling, Near field optics, Electromagnetism, EUV optics

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SPIE Journal Paper | 1 July 2007

Rigorous electromagnetic field mask modeling and related lithographic effects in the low k1 and ultrahigh numerical aperture regime

Andreas Erdmann, Peter Evanschitzky

JM3, Vol. 6, Issue 03, 031002, (July 2007) https://doi.org/10.1117/12.10.1117/1.2778447

KEYWORDS: Photomasks, Diffraction, Polarization, Refractive index, Lithography, Electromagnetism, Binary data, Water, Lithographic illumination, Critical dimension metrology

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SPIE Journal Paper | 1 July 2007

Direct optimization approach for lithographic process conditions

Tim Fühner, Andreas Erdmann, Sebastian Seifert

JM3, Vol. 6, Issue 03, 031006, (July 2007) https://doi.org/10.1117/12.10.1117/1.2785031

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Lithographic illumination, Binary data, Optimization (mathematics), Manufacturing, Critical dimension metrology, Image processing, Computer simulations

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Proceedings Article | 3 May 2007 Paper

Fast near field simulation of optical and EUV masks using the waveguide method

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 6533, 65330Y (2007) https://doi.org/10.1117/12.736978

KEYWORDS: Photomasks, Waveguides, Extreme ultraviolet, Computer simulations, Near field, EUV optics, Near field optics, Imaging systems, Electromagnetism, Diffraction

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SPIE Journal Paper | 1 April 2007

Simulation of mask proximity printing

Balint Meliorisz, Andreas Erdmann

JM3, Vol. 6, Issue 02, 023006, (April 2007) https://doi.org/10.1117/12.10.1117/1.2727475

KEYWORDS: Diffraction, Photomasks, Printing, Photoresist materials, Lithography, Computer simulations, Refractive index, Waveguides, Wave propagation, Tolerancing

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Proceedings Article | 27 March 2007 Paper

The impact of the mask stack and its optical parameters on the imaging performance

Andreas Erdmann, Tim Fühner, Sebastian Seifert, Stephan Popp, Peter Evanschitzky

Proceedings Volume 6520, 65201I (2007) https://doi.org/10.1117/12.709351

KEYWORDS: Photomasks, Diffraction, Refractive index, Polarization, Semiconducting wafers, Phase shifts, Lithography, Standards development, Binary data, Imaging systems

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Proceedings Article | 27 March 2007 Paper

Dr.LiTHO: a development and research lithography simulator

Tim Fühner, Thomas Schnattinger, Gheorghe Ardelean, Andreas Erdmann

Proceedings Volume 6520, 65203F (2007) https://doi.org/10.1117/12.709535

KEYWORDS: Visualization, Lithography, Data modeling, Human-machine interfaces, Computer programming, Computer simulations, Computer programming languages, C++, Data conversion, Photoresist materials

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Proceedings Article | 21 June 2006 Paper

Rigorous mask modeling beyond the Hopkins approach

J. Schermer, P. Evanschitzky, A. Erdmann

Proceedings Volume 6281, 62810A (2006) https://doi.org/10.1117/12.692730

KEYWORDS: Photomasks, Lithography, Performance modeling, Projection systems, Diffraction, Image processing, Systems modeling, Source mask optimization, Imaging systems, Integrated modeling

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Proceedings Article | 19 May 2006 Paper

Rigorous mask modeling using waveguide and FDTD methods: an assessment for typical hyper-NA imaging problems

Andreas Erdmann, Peter Evanschitzky, Giuseppe Citarella, Tim Fühner, Peter De Bisschop

Proceedings Volume 6283, 628319 (2006) https://doi.org/10.1117/12.681872

KEYWORDS: Photomasks, Finite-difference time-domain method, Waveguides, Diffraction, Computer simulations, Polarization, Optical proximity correction, Lithography, Electromagnetism, 3D modeling

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Proceedings Article | 23 March 2006 Paper

Defect printability study using EUV lithography

Christian Holfeld, Karsten Bubke, Falk Lehmann, Bruno La Fontaine, Adam Pawloski, Siegfried Schwarzl, Frank-Michael Kamm, Thomas Graf, Andreas Erdmann

Proceedings Volume 6151, 61510U (2006) https://doi.org/10.1117/12.656386

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Photoresist processing, Extreme ultraviolet lithography, Image processing, Scanning electron microscopy, Extreme ultraviolet, Lithography, Projection systems

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Proceedings Article | 20 March 2006 Paper

Efficient optimization of lithographic process conditions using a distributed, combined global/local search approach

Tim Fühner, Stephan Popp, Christoph Dürr, Andreas Erdmann

Proceedings Volume 6154, 61543S (2006) https://doi.org/10.1117/12.656197

KEYWORDS: Photomasks, Genetic algorithms, Optimization (mathematics), Critical dimension metrology, Lithography, Lithographic illumination, Image analysis, Evolutionary algorithms, Computer programming, Algorithm development

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Proceedings Article | 15 March 2006 Paper

Mask defect printing mechanisms for future lithography generations

Andreas Erdmann, Thomas Graf, Karsten Bubke, Ingo Höllein, Silvio Teuber

Proceedings Volume 6154, 61541C (2006) https://doi.org/10.1117/12.655558

KEYWORDS: Photomasks, Printing, Lithography, Glasses, Extreme ultraviolet, Phase shifts, Polarization, Semiconducting wafers, Computer simulations, Near field

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Proceedings Article | 15 March 2006 Paper

Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask

Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Hans Schermer, Vicky Philipsen, Peter De Bisschop

Proceedings Volume 6154, 61540G (2006) https://doi.org/10.1117/12.655561

KEYWORDS: Photomasks, Diffraction, Polarization, Computer simulations, Lithography, Projection systems, Data modeling, Finite-difference time-domain method, Optical lithography, Image acquisition

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Proceedings Article | 9 November 2005 Paper

Three dimensional EUV simulations: a new mask near field and imaging simulation system

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5992, 59925B (2005) https://doi.org/10.1117/12.632071

KEYWORDS: Extreme ultraviolet, Photomasks, Imaging systems, Near field, Finite-difference time-domain method, Polarization, Computer simulations, 3D modeling, Diffraction, Waveguides

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The integrated European research project "More Moore" is designed to push the limits of lithography to enable and exceed the requirements for the 22 nm node. Within the project the lithography group of Fraunhofer IISB is responsible for the development and evaluation of different simulation approaches for a predictive modeling of EUV (extreme ultraviolet) imaging technology for sub 22 nm features. During the first project year two new three dimensional EUV mask simulation models and a new EUV imaging model were developed. For the three dimensional mask near field simulation the modal method by Fourier expansion, developed by the project partner from Centre National de la Recherche Scientifique (CNRS) France, and the waveguide method (WG), developed by Fraunhofer IISB, are available. Both methods are rigorous electromagnetic field solver operating in the frequency domain. A good agreement with the established finite-difference time-domain (FDTD) method and a significantly higher performance compared to FDTD in case of periodic mask structures with rectangular elements can be observed. Additionally the WG method is able to simulate rigorously EUV masks with defective multilayers and with a full consideration of the defect geometry. The imaging model is characterized by a Jones pupil based representation of the imaging system and by a completely vectorial description of the light propagation, taking into account important polarization dependent effects like source polarization effects, mask topography polarization effects and effects resulting from light propagation in multilayer systems. This paper will present the new three dimensional WG method for the EUV mask near field simulation in combination with the vectorial imaging system and in comparison to our FDTD reference method. Typical 2D and 3D mask structures and new EUV mask concepts like phase shift masks with etched multilayers in combination with defect free and defective multilayers stacks are simulated exemplarily. Additionally aerial images and image CDs resulting from the two different simulation approaches (WG and FDTD) are compared as well as the mask near fields, the computation time, and the convergence.

Proceedings Article | 16 June 2005 Paper

Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects

Andreas Erdmann

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637285

KEYWORDS: Photomasks, Diffraction, Polarization, Chromium, Lithography, Binary data, Refractive index, Phase shifts, Projection systems, Optical proximity correction

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Proceedings Article | 17 May 2005 Paper

Correlation analysis: a fast and reliable method for a better understanding of simulation models in optical lithography

Bernd Tollkuhn, Anne Heubner, Klaus Elian, Boris Ruppenstein, Andreas Erdmann

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.599390

KEYWORDS: Process modeling, Calibration, Lithography, Diffusion, Optical proximity correction, Optical lithography, Critical dimension metrology, Optical simulations, Photomasks, Statistical analysis

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Proceedings Article | 12 May 2005 Paper

Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography

Peter De Bisschop, Andreas Erdmann, Andreas Rathsfeld

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599792

KEYWORDS: Optical spheres, Semiconducting wafers, Finite-difference time-domain method, Immersion lithography, Refractive index, Lithography, Finite element methods, Optical lithography, Printing, Prototyping

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Proceedings Article | 12 May 2005 Paper

Mask and wafer topography effects in immersion lithography

Andreas Erdmann, Peter Evanschitzky, Peter De Bisschop

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599416

KEYWORDS: Photomasks, Diffraction, Semiconducting wafers, Lithography, Immersion lithography, Computer simulations, Polarization, Photoresist materials, Liquids, Near field optics

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Proceedings Article | 12 May 2005 Paper

Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm

Tim Fuhner, Andreas Erdmann

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599410

KEYWORDS: Photomasks, Optimization (mathematics), Genetic algorithms, Lithography, Lithographic illumination, Critical dimension metrology, Computer programming, Optical proximity correction, Resolution enhancement technologies, Computer simulations

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Intuitive design of the lithographic process becomes increasingly complicated in the regime of off-axis illumination and optical proximity correction. Therefore, new optimization procedures have to be introduced to facilitate the search for ideal process settings. This paper proposes mutual optimization of illumination and mask geometries using an automatic optimization approach based on a genetic algorithm. As presented elsewhere, this optimization procedure has been applied to different mask representations. It has been found that a blend of a fully parameterized and a pixel-based representation, i.e., a rectangle representation, leads to highly innovative solutions, but can still maintain an acceptable convergence behavior. This representation is revisited and its main principles and limitations are shortly discussed. The main focus of this paper is on a refinement of the source geometry representation. In previous versions, the general illumination setup had to be prespecified. Merely its parameters (e.g, inner and outer radius of annular illumination, number, offset, and radius of poles for multipole illumination) were optimized. In this work, the source is represented by a sector/track definition, which allows different sections of the illumination to have different transmission values. The obtained illumination geometry is transferred into a pixel-based representation, processable by the utilized Fraunhofer IISB in-house lithography simulator. The illumination shapes achieved with the proposed approach can, for example, be produced by diffractive optics elements (DOEs). Various merit criteria determine the imaging performance of both the mask and the source settings. As the merit or fitness function plays one of the central roles in the proposed optimization scheme, individual fitness criteria and their transformation into an objective function are revisited and shortly explained. New results for both dense and chain contact hole layouts, and a comparison with former results validate the proposed approach and illustrate its further potentials.

Proceedings Article | 2 November 2004 Paper

Genetic algorithms for geometry optimization in lithographic imaging systems

Tim Fuehner, Andreas Erdmann, Thomas Schnattinger

Proceedings Volume 5558, (2004) https://doi.org/10.1117/12.560085

KEYWORDS: Photomasks, Genetic algorithms, Optimization (mathematics), Manufacturing, Lithography, Critical dimension metrology, Imaging systems, Lithographic illumination, Binary data, Resolution enhancement technologies

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Proceedings Article | 2 June 2004 Paper

The impact of EUV mask defects on lithographic process performance

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568013

KEYWORDS: Photomasks, Extreme ultraviolet, Multilayers, Reflectivity, Near field, 3D modeling, Computer simulations, Image compression, Semiconducting wafers, Extreme ultraviolet lithography

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Proceedings Article | 28 May 2004 Paper

Toward automatic mask and source optimization for optical lithography

Andreas Erdmann, Tim Fuehner, Thomas Schnattinger, Bernd Tollkuehn

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533215

KEYWORDS: Photomasks, Lithography, Optimization (mathematics), Critical dimension metrology, Genetic algorithms, Manufacturing, Binary data, Resolution enhancement technologies, Optical lithography, Lithographic illumination

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Proceedings Article | 28 May 2004 Paper

Process optimization using lithography simulation

Andreas Erdmann

Proceedings Volume 5401, (2004) https://doi.org/10.1117/12.556987

KEYWORDS: Photomasks, Lithography, Projection systems, Photoresist materials, Image processing, Diffraction, Optimization (mathematics), Semiconducting wafers, Genetic algorithms, Binary data

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Proceedings Article | 20 May 2004 Paper

Enhanced model for the efficient 2D and 3D simulation of defective EUV masks

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.533217

KEYWORDS: Photomasks, Extreme ultraviolet, Near field, Waveguides, Finite-difference time-domain method, 3D modeling, Computer simulations, Multilayers, Diffraction, Lithography

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Proceedings Article | 14 May 2004 Paper

Do we need complex resist models for predictive simulation of lithographic process performance?

Bernd Tollkuhn, Andreas Erdmann, Jeroen Lammers, Christoph Nolscher, Armin Semmler

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534045

KEYWORDS: Finite element methods, Calibration, Data modeling, Photomasks, Diffusion, Optical proximity correction, Semiconducting wafers, Critical dimension metrology, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 31 December 2003 Paper

Mask and source optimization for lithographic imaging systems

Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, Gabriela Kokai

Proceedings Volume 5182, (2003) https://doi.org/10.1117/12.504732

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Genetic algorithms, Binary data, Lithographic illumination, Optimization (mathematics), Resolution enhancement technologies, Manufacturing, Projection systems

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Proceedings Article | 17 December 2003 Paper

Rigorous simulation of defective EUV multilayer masks

Christoph Sambale, Thomas Schmoeller, Andreas Erdmann, Peter Evanschitzky, Christian Kalus

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518049

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, Near field, Finite-difference time-domain method, Extreme ultraviolet lithography, 3D modeling, Image segmentation, Lithography

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Proceedings Article | 17 December 2003 Paper

EUV mask simulation for AIMS

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, Axel Zibold

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518053

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Imaging systems, Lithographic illumination, Reticles, EUV optics, Wafer-level optics

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Proceedings Article | 19 November 2003 Paper

Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer

Andreas Erdmann, Christian Kalus

Proceedings Volume 4829, (2003) https://doi.org/10.1117/12.530047

KEYWORDS: Lithography, Semiconducting wafers, Photoresist materials, Photomasks, Diffraction, Finite-difference time-domain method, Microelectronics, Computer simulations, Silicon, Light wave propagation

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Proceedings Article | 28 August 2003 Paper

Simulation of extreme ultraviolet masks with defective multilayers

Peter Evanschitzky, Andreas Erdmann, Maxime Besacier, Patrick Schiavone

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504075

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, 3D modeling, Finite-difference time-domain method, Diffraction, Near field, Computer simulations, Extreme ultraviolet lithography

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SPIE Journal Paper | 1 July 2003

Rigorous simulation of alignment for microlithography

Nikolay Nikolaev, Andreas Erdmann

JM3, Vol. 2, Issue 03, (July 2003) https://doi.org/10.1117/12.10.1117/1.1584685

KEYWORDS: Finite-difference time-domain method, Optical alignment, Diffraction, Imaging systems, Solids, Sensors, Curium, Signal detection, Computer simulations, Semiconducting wafers

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Proceedings Article | 26 June 2003 Paper

Rigorous simulation of exposure over nonplanar wafers

Andreas Erdmann, Christian Kalus, Thomas Schmoeller, Yewgenija Klyonova, Takashi Sato, Ayako Endo, Tsuyoshi Shibata, Yuuji Kobayashi

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485390

KEYWORDS: Semiconducting wafers, Photomasks, Lithography, Diffraction, Photoresist materials, Computer simulations, Finite-difference time-domain method, Electromagnetism, Silicon, Reflectivity

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Proceedings Article | 16 June 2003 Paper

Efficient simulation of light diffraction from three-dimensional EUV masks using field decomposition techniques

Andreas Erdmann, Christian Kalus, Thomas Schmoeller, Andreas Wolter

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482744

KEYWORDS: Photomasks, Computer simulations, Near field, Extreme ultraviolet, Finite-difference time-domain method, Reflectivity, Diffraction, 3D image processing, 3D modeling, Electromagnetism

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