Dr. Andreas Erdmann
Head of Computational Lithography & Optics at Fraunhofer IISB
SPIE Involvement:
Fellow status | Senior status | Conference Program Committee | Conference Chair | Conference Co-Chair | Editor | Author | Instructor
Publications (138)

SPIE Conference Volume | June 29, 2018

PROCEEDINGS ARTICLE | May 29, 2018
Proc. SPIE. 10694, Computational Optics II
KEYWORDS: Lithography, Diffraction, Lithographic illumination, Imaging systems, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Critical dimension metrology

PROCEEDINGS ARTICLE | May 28, 2018
Proc. SPIE. 10694, Computational Optics II
KEYWORDS: Lithography, Defect detection, Image processing, Reflectivity, Photomasks, Extreme ultraviolet, Image classification, Extreme ultraviolet lithography, Convolution, Network architectures

PROCEEDINGS ARTICLE | May 28, 2018
Proc. SPIE. 10694, Computational Optics II
KEYWORDS: Staring arrays, Lithography, Diffraction, Imaging systems, Image resolution, Image quality, Photomasks, Nanoimprint lithography, Binary data, Phase shifts

PROCEEDINGS ARTICLE | March 20, 2018
Proc. SPIE. 10589, Advanced Etch Technology for Nanopatterning VII
KEYWORDS: Polymethylmethacrylate, Polymers, Directed self assembly, Plasma etching

PROCEEDINGS ARTICLE | March 19, 2018
Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX
KEYWORDS: Thin films, Lithography, Refractive index, Nickel, Reflectivity, Photomasks, Extreme ultraviolet, Ruthenium, Phase shifts

Showing 5 of 138 publications
Conference Committee Involvement (19)
Extreme Ultraviolet (EUV) Lithography X
24 February 2019 | San Jose, California, United States
Computational Optics 2018
16 May 2018 | Frankfurt, Germany
Optical Microlithography XXXI
27 February 2018 | San Jose, California, United States
Optical Microlithography XXX
28 February 2017 | San Jose, California, United States
Optical Microlithography XXIX
23 February 2016 | San Jose, California, United States
Showing 5 of 19 published special sections
Course Instructor
SC482: Mask Topography Effects in Reticle Enhancement Technologies and Next-Generation Lithography
This course will provide attendees with a basic understanding of how mask topography affects the intended behavior of commonly used reticle enhancement technologies such as phase-shift masks, optical proximity correction, and subresolution assist features, as well as defect printability. Moreover, the importance of mask topographic effects for EUV-lithography and for alignment mark analysis will be discussed. The intended outcome of the course is to learn the physical basis for scattering effects resulting from the topography, what resources are available to quantify these effects, and what steps might be taken to achieve "pre-scatter" intended results.
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