New embossed hologram originating technique, producing effects which are not possible to reproduce with commonly used image-matrix Kinemax type equipment was developed. Thus, Geola Digital Ltd. is launching a series of unique equipment devoted to embossed holograms originating. Equipment allows one to produce master-holograms containing simultaneously achromatic and true colour deep 3D images. Such images are perfectly viewable while illuminated with light sources situated in front of the hologram or at its back. The Originators also can produce and with higher precision all effects achievable with commonly used image-matrix originators. Therefore, an ultimate goal to have one Originator assuring all security features from Level 1 to Level 4 is achieved. Moreover, pulsed laser employed in Geola's originators enable one to produce whole holograms windows quickly, employing an optical holograms recombination instead of mechanical one.
New combined embossed hologram originating technique was developed by the international team of holography experts. The technique merges deep 3D holographic images with commonly used hologram security features. Deep 3D images were first recorded on photoresist with Geola's holographic printer containing their proprietary pulsed laser. Optical security features were then overexposed onto the photoresist plates containing latent images of deep 3D scenes. The photoresist plates with several exposures (containing optical security features and deep 3D images) were developed. Embossed holograms, containing such effective public security features as full colour 3D images, guilloches, rainbow patterns were manufactured. Manufactured embossed holograms also contained such optical security features as microtext and laser readable hidden image.
The application prospect of zinc oxide (ZnO) nanostructures largely relies on the ability to grow nanoobjects with necessary geometry. In this study well-aligned ZnO nanorod arrays with a high density and uniformity were successfully synthesized on the glass substrates by a hydrothermal method at low-temperature. The aqueous solutions of zinc nitrate hexahydrate and hexamethylenetetramine was used. The effect of seed layer (obtained by electrochemical method and by vacuum deposition method) on the alignment of ZnO nanorods has been investigated. The morphological properties of the ZnO nanorods were also examined in accordance with varying the magnetron sputtering angle for ZnO seeds deposition. It is also shown that the electric field can control the direction of the growth of ZnO nanorods. Morphological, structural and compositional characterizations of obtained films were carried out by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction analysis methods.
The present article is focused on the optical properties of amorphous As-S-Se thin films and chemical wet-etching in organic non-aqua amine-based solution. Different etching rates depending upon the sample exposure dose and etchant concentration were found. The maximum selective etching ratio 7:1 for samples was achieved. An interference method of in situ real-time monitoring of etching rate for the area with different exposure doses for the same sample was proposed. The efficiency of formation of relief gratings for amorphous As-S-Se thin films depending on the exposure dose was studied. Quality holographic gratings with diffraction efficiency (DE) of up to 65% were received. The results of the current study demonstrate an adequate etching selectivity for fabricating micro structures and possibility of practical application of amorphous chalcogenide thin films in holography and optical lithography.
KEYWORDS: Holograms, Diffraction, 3D image reconstruction, Visualization, Diffraction gratings, Information security, Optical recording, Digital holography, Holography, Scanning electron microscopy
The given work investigates principles of recording, calculation, and security aspects of ‘hidden image’ effect in digital holograms that are intended for security applications. Dot-matrix and image-matrix technologies of optical recording can be widely used for recording protective holograms with such type of security features. When a collimated laser beam falls on and then is reflected from the section of holograms, containing a protective ‘hidden image’ element, a graphic image can be seen in the projection of diffracted light on the frosted screen. The present work also discusses a method of personalizing the ‘hidden image’ effect with the help of laser demetallization. In this way the hidden image can be individualized for each hologram sticker and contain additional information such as a number, text or logotype. The attractiveness of this method is in the possibility of achieving a considerable increase of the protective characteristic of holograms and incorporating additional variable information in them, as well as in providing both visual and automatic ways of checking authenticity of a hologram.
The electron beam (EB) induced changes in solubility of thin As-S-Se films have been studied. Optimal
absorption current choice, nano structure relief and shape dependence on acceleration voltage discussed. The possibilities
of practical use of these materials as resist for gratings and optical diffractive element production using EB. New results
are presented that indicate chalcogenide glasses as promising electron beam resists.
Electron beam (EB) induced changes in thin films of the amorphous chalcogenide semiconductors As-S-Se
have been studied. The experimental results on patterning of As-S-Se film surfaces by EB exposure and following
chemical etching are presented. The possibilities of practical application of this material as resists for the production of
relief holograms and diffractive optical elements (DOE) are discussed.
The given work investigates a way of integrating Diffractive Optical Elements (DOE) in the structure of a protective
image-matrix hologram. An important feature of the suggested method is simplicity of realization by some modification
of the frames exposure software and full hardware compatibility with image-matrix technology. Unlike other methods,
the suggested one does not require changing the optical scheme between transitions from recording holographic frames
area to the DOE ones and vice versa. Any shape of DOE in the hologram approximated to the size of the frame is
available. A DOE frame cannot contain any part of a holographic region due to the different method of exposure. The
minimal size of one DOE pixel is about 3 micrometer. The method under discussion allows for recording both binary
(two-phase) and multilevel (multi-phase) DOE at corresponding calibrations of the employed Spatial Light Modulator
(SLM). The method has passed an experimental approbation and is now used for embedding DOE into an image-matrix
hologram as an additional security element.
We have performed the investigation of dot matrix holographic recording in amorphous As2S3 chalcogenide films
with different thickness on Al coated glass substrates. The control over the interference minimum of reflection during the
evaporation process allowed obtaining As2S3-Al system with a minimum value of initial reflection in defined spectral
region. The investigation of dependence of diffraction efficiency of holographic recording on both film thickness and
initial conditions of reflectivity in the system was performed. The main advantage of this type of system is the possibility
to increase optical sensitivity of material in predefined spectrum region for phase hologram recording.
We have developed PC controlled dot-matrix holographic recording system based on the CW diode pumped YAG:Nd
SHG laser (wavelength 532 nm, power 30mW,) modulated electronically with TTL signals. Two-beam technique has
been used with convergence angle 30o and PC controlled incident beam plane rotation 0-360o. Optical system consists of beam splitter, 40mm focus length forming cylindrical lens and 40mm focusing lens. Characteristic parameters of
experimental equipment are following: spot size - 50-200 micrometers, direct laser writing area, limited by x-y
positioning system, was 70mm x 70mm, number of writing head rotation positions up to 256 (8 bit), time of each
exposure - 1-1000 msec.
As the recording material we have used AsxSySe1-x chalcogenide glass material. Diffraction efficiency of written
gratings in the material in dot-matrix regime exceeds 25%. Original method for surface relief enhancement by etching
and subsequent electroplating has been developed. Special PC controlled device for thermal imprinting of relief
holograms on the metallized polyamide film has been built.
Measurements of light transmission, reflection, and diffraction phenomena of laser beams in processed chalcogenide
materials are discussed.
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